Combining TCAD and Monte Carlo Methods to Simulate High-Resistivity CMOS Pixel Detectors using the Allpix2 Framework

For the research and development (R&D) of new silicon sensor technology, simulations of silicon detectors are a vital tool for determining their characteristics and performance. Simulations furthermore complement and help to understand experiments conducted on silicon sensors. In this project el...

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Detalles Bibliográficos
Autor principal: Dort, Katharina
Lenguaje:eng
Publicado: 2018
Materias:
Particle Physics - Experiment
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/2637507
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author Dort, Katharina
author_facet Dort, Katharina
author_sort Dort, Katharina
collection CERN
description For the research and development (R&D) of new silicon sensor technology, simulations of silicon detectors are a vital tool for determining their characteristics and performance. Simulations furthermore complement and help to understand experiments conducted on silicon sensors. In this project electrostatic field simulations with TCAD are combined with a Monte Carlo method with the Allpix2 in order to determine the properties of an High-Resistivity CMOS silicon sensor. The simulation is validated against test beam data and the performance of the silicon detector is assessed.
id cern-2637507
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2018
record_format invenio
spelling cern-26375072019-09-30T06:29:59Zhttp://cds.cern.ch/record/2637507engDort, KatharinaCombining TCAD and Monte Carlo Methods to Simulate High-Resistivity CMOS Pixel Detectors using the Allpix2 FrameworkParticle Physics - ExperimentDetectors and Experimental TechniquesFor the research and development (R&D) of new silicon sensor technology, simulations of silicon detectors are a vital tool for determining their characteristics and performance. Simulations furthermore complement and help to understand experiments conducted on silicon sensors. In this project electrostatic field simulations with TCAD are combined with a Monte Carlo method with the Allpix2 in order to determine the properties of an High-Resistivity CMOS silicon sensor. The simulation is validated against test beam data and the performance of the silicon detector is assessed.CERN-STUDENTS-Note-2018-107oai:cds.cern.ch:26375072018-09-07
spellingShingle Particle Physics - Experiment
Detectors and Experimental Techniques
Dort, Katharina
Combining TCAD and Monte Carlo Methods to Simulate High-Resistivity CMOS Pixel Detectors using the Allpix2 Framework
title Combining TCAD and Monte Carlo Methods to Simulate High-Resistivity CMOS Pixel Detectors using the Allpix2 Framework
title_full Combining TCAD and Monte Carlo Methods to Simulate High-Resistivity CMOS Pixel Detectors using the Allpix2 Framework
title_fullStr Combining TCAD and Monte Carlo Methods to Simulate High-Resistivity CMOS Pixel Detectors using the Allpix2 Framework
title_full_unstemmed Combining TCAD and Monte Carlo Methods to Simulate High-Resistivity CMOS Pixel Detectors using the Allpix2 Framework
title_short Combining TCAD and Monte Carlo Methods to Simulate High-Resistivity CMOS Pixel Detectors using the Allpix2 Framework
title_sort combining tcad and monte carlo methods to simulate high-resistivity cmos pixel detectors using the allpix2 framework
topic Particle Physics - Experiment
Detectors and Experimental Techniques
url http://cds.cern.ch/record/2637507
work_keys_str_mv AT dortkatharina combiningtcadandmontecarlomethodstosimulatehighresistivitycmospixeldetectorsusingtheallpix2framework

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