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Combining TCAD and Monte Carlo Methods to Simulate High-Resistivity CMOS Pixel Detectors using the Allpix2 Framework
For the research and development (R&D) of new silicon sensor technology, simulations of silicon detectors are a vital tool for determining their characteristics and performance. Simulations furthermore complement and help to understand experiments conducted on silicon sensors. In this project el...
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| Lenguaje: | eng |
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2018
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| Acceso en línea: | http://cds.cern.ch/record/2637507 |