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Annealing study of Proton Irradiated p-type Silicon Diodes using TSC Spectroscopy
An annealing study was performed using TSC spectroscopy in addition to I-V/C-V measurements on proton irradiated p-type epitaxial silicon diodes 50 µm thick, with an active area, A, of 0.25 mm2 and 250 Ω·cm resistivity. The samples were irradiated with 23 GeV protons with two different fluences, 1.3...
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| Lenguaje: | eng |
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2018
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| Acceso en línea: | http://cds.cern.ch/record/2638606 |