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Investigations into the effect of gamma irradiation on the leakage current of 130-nm readout chips for the ATLAS ITk strip detector

One of the challenges facing the system-level design of the ATLAS ITk Strip Detector is the understanding of the TID induced leakage current in the 130nm CMOS technology employed in the readout chips. To this end, the effect of ionizing radiation on the current draw of the prototype ABC130 readout A...

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Detalles Bibliográficos
Autor principal: Woelker, Ricardo
Lenguaje:eng
Publicado: 2018
Materias:
Acceso en línea:http://cds.cern.ch/record/2638612
Descripción
Sumario:One of the challenges facing the system-level design of the ATLAS ITk Strip Detector is the understanding of the TID induced leakage current in the 130nm CMOS technology employed in the readout chips. To this end, the effect of ionizing radiation on the current draw of the prototype ABC130 readout ASIC has been studied at various different dose rates and temperatures using tungsten x-ray tubes and Co-60 sources. In addition, the efficacy of pre-irradiation of chips has been studied along with the variation of the effect across wafers and batches. The results shown here allow a better understanding of the effect of TID on final detector systems and associated system design.