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Development of a new front-end electronics in Si and SiGe technology for the Resistive Plate Chamber (RPC) detector for high-rate experiments
The Resistive Plate Chamber (RPC) detector Front-End (FE) for high-rate experiments is being developed. A mixed technology in silicon and silicongermanium is used in order to enhance its performances: a preamplifier in silicon with a very low inner noise (1000 e− rms) and a new kind of discriminator...
Autores principales: | , , , , , , , |
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Lenguaje: | eng |
Publicado: |
2018
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1393/ncc/i2018-18082-y http://cds.cern.ch/record/2645124 |
_version_ | 1780960427477303296 |
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author | Pizzimento, L. Cardarelli, R. Bruno, S. Caltabiano, A. Camarri, P. Di Ciaccio, A. Liberti, B. Rocchi, A. |
author_facet | Pizzimento, L. Cardarelli, R. Bruno, S. Caltabiano, A. Camarri, P. Di Ciaccio, A. Liberti, B. Rocchi, A. |
author_sort | Pizzimento, L. |
collection | CERN |
description | The Resistive Plate Chamber (RPC) detector Front-End (FE) for high-rate experiments is being developed. A mixed technology in silicon and silicongermanium is used in order to enhance its performances: a preamplifier in silicon with a very low inner noise (1000 e− rms) and a new kind of discriminator in SiGe technology with a threshold of the order of 1 mV. |
id | cern-2645124 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2018 |
record_format | invenio |
spelling | cern-26451242020-01-09T14:08:02Zdoi:10.1393/ncc/i2018-18082-yhttp://cds.cern.ch/record/2645124engPizzimento, L.Cardarelli, R.Bruno, S.Caltabiano, A.Camarri, P.Di Ciaccio, A.Liberti, B.Rocchi, A.Development of a new front-end electronics in Si and SiGe technology for the Resistive Plate Chamber (RPC) detector for high-rate experimentsphysics.ins-detDetectors and Experimental TechniquesThe Resistive Plate Chamber (RPC) detector Front-End (FE) for high-rate experiments is being developed. A mixed technology in silicon and silicongermanium is used in order to enhance its performances: a preamplifier in silicon with a very low inner noise (1000 e− rms) and a new kind of discriminator in SiGe technology with a threshold of the order of 1 mV.oai:cds.cern.ch:26451242018-06-11 |
spellingShingle | physics.ins-det Detectors and Experimental Techniques Pizzimento, L. Cardarelli, R. Bruno, S. Caltabiano, A. Camarri, P. Di Ciaccio, A. Liberti, B. Rocchi, A. Development of a new front-end electronics in Si and SiGe technology for the Resistive Plate Chamber (RPC) detector for high-rate experiments |
title | Development of a new front-end electronics in Si and SiGe technology for the Resistive Plate Chamber (RPC) detector for high-rate experiments |
title_full | Development of a new front-end electronics in Si and SiGe technology for the Resistive Plate Chamber (RPC) detector for high-rate experiments |
title_fullStr | Development of a new front-end electronics in Si and SiGe technology for the Resistive Plate Chamber (RPC) detector for high-rate experiments |
title_full_unstemmed | Development of a new front-end electronics in Si and SiGe technology for the Resistive Plate Chamber (RPC) detector for high-rate experiments |
title_short | Development of a new front-end electronics in Si and SiGe technology for the Resistive Plate Chamber (RPC) detector for high-rate experiments |
title_sort | development of a new front-end electronics in si and sige technology for the resistive plate chamber (rpc) detector for high-rate experiments |
topic | physics.ins-det Detectors and Experimental Techniques |
url | https://dx.doi.org/10.1393/ncc/i2018-18082-y http://cds.cern.ch/record/2645124 |
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