Cargando…
Site selective doping of compound semiconductors by ion implantation of radioactive nuclei
Autores principales: | Weyer, G, Petersen, J W, Damgaard, S, Nielsen, H L, Heinemeier, J |
---|---|
Lenguaje: | eng |
Publicado: |
1980
|
Materias: | |
Acceso en línea: | https://dx.doi.org/10.1103/PhysRevLett.44.155 http://cds.cern.ch/record/264785 |
Ejemplares similares
-
Sn impurity defects in germanium from ion implantations of radioactive $^{119}$In
por: Weyer, G, et al.
Publicado: (1980) -
Mössbauer study of $^{119}$Sn defects in silicon from ion implantations of radioactive $^{119}$In
por: Weyer, G, et al.
Publicado: (1980) -
Mössbauer study of a complex Sn-impurity defect in GaAs from implantations of radioactive $^{119}$In ions
por: Weyer, G, et al.
Publicado: (1980) -
Comparison of impurity defect structures formed by ion implantations in amorphous and crystalline silicon
por: Weyer, G, et al.
Publicado: (1982) -
Lattice location of ion-implanted radioactive dopants in compound semiconductors
por: Winter, S, et al.
Publicado: (1990)