Cargando…

Site selective doping of compound semiconductors by ion implantation of radioactive nuclei

Detalles Bibliográficos
Autores principales:	Weyer, G, Petersen, J W, Damgaard, S, Nielsen, H L, Heinemeier, J
Lenguaje:	eng
Publicado:	1980
Materias:	Other Fields of Physics
Acceso en línea:	https://dx.doi.org/10.1103/PhysRevLett.44.155 http://cds.cern.ch/record/264785

Ejemplares similares

Sn impurity defects in germanium from ion implantations of radioactive $^{119}$In
por: Weyer, G, et al.
Publicado: (1980)

Mössbauer study of $^{119}$Sn defects in silicon from ion implantations of radioactive $^{119}$In
por: Weyer, G, et al.
Publicado: (1980)

Mössbauer study of a complex Sn-impurity defect in GaAs from implantations of radioactive $^{119}$In ions
por: Weyer, G, et al.
Publicado: (1980)

Comparison of impurity defect structures formed by ion implantations in amorphous and crystalline silicon
por: Weyer, G, et al.
Publicado: (1982)

Lattice location of ion-implanted radioactive dopants in compound semiconductors
por: Winter, S, et al.
Publicado: (1990)

Mossbauer study of /sup 119/Sn defects in silicon from ion implantations of radioactive /sup 119/In
por: Weyer, G, et al.
Publicado: (1980)

As-implanted lattice site of dopants in semiconductors
por: Hofsäss, H C, et al.
Publicado: (1986)

Radiogenic Sn defects in ion implanted InP
por: Damgaard, S, et al.
Publicado: (1981)

Mössbauer studies of defects in ion implanted metals and semiconductors
por: Weyer, G
Publicado: (1988)

Mössbauer Study of a Complex $^{119}Sn$ Impurity Defect in GaP
por: Weyer, G, et al.
Publicado: (1980)

Systematic experimental and theoretical studies of the lattice vibrations of host atoms and substitutional Sn impurities in III-V semiconductors
por: Nielsen, O H, et al.
Publicado: (1982)

Applications of Mössbauer spectroscopy to characterize highly-doped semiconductors
por: Weyer, G
Publicado: (1988)

Diffusion of ion implanted Sn and Sb in heavily doped silicon
por: Andersen, P E, et al.
Publicado: (1988)

$^{119}$Sn Mössbauer study of the implantation behaviour of $^{119}$In, $^{119}$Sn, $^{119m}$Sn, $^{119}$Sb and $^{119m}$Te ions in SiC
por: Petersen, J W, et al.
Publicado: (1985)

Workshop on Traps for Antimatter and Radioactive Nuclei
por: D'Auria, John M, et al.
Publicado: (1994)

International Conference on Ion Implantation in Semiconductors
por: Hohmuth, K
Publicado: (1978)

International Conference on Ion Implantation in Semiconductors
por: Hohmuth, K
Publicado: (1978)

Annealing behaviour of compound semiconductors after ion implantation investigated by emission-channeling and blocking
por: Jahn, S G, et al.
Publicado: (1990)

The lattice dynamics of substitutional Sn on the two different lattice sites in III - V compound semiconductors
por: Weyer, G, et al.
Publicado: (1983)

Applications of Mössbauer spectroscopy to investigations of defects in semiconductors
por: Nylandsted-Larsen, A, et al.
Publicado: (1988)

Site changes of ion-implanted Li in GaAs below 300 K
por: Lindner, G, et al.
Publicado: (1989)

High resolution conversion spectroscopy of impurities in semiconductors
por: Petersen, J W, et al.
Publicado: (1992)

5th International Conference on Ion Implantation in Semiconductors
por: Chernow, Fred, et al.
Publicado: (1977)

Defect recovery of ion implanted InP
por: Weyer, G
Publicado: (1994)

Direct evidence for substitutional ion-implanted indium dopants in silicon
por: Lindner, G, et al.
Publicado: (1986)

Lattice location of ion-implanted dopants in GaAs using radioactive probes
por: Winter, S, et al.
Publicado: (1989)

Internal oxidation of 5sp-impurities in nobel metals
por: Andreasen, H, et al.
Publicado: (1985)

The tin-vacancy pair defect in silicon
por: Damgaard, S, et al.
Publicado: (1981)

The nature of radiogenic Sn defects in group-IV elements
por: Weyer, G, et al.
Publicado: (1981)

Electronic properties of doped semiconductors
por: Shklovskii, Boris I, et al.
Publicado: (1984)

Defect structures in ion-implanted InSb
por: Weyer, G, et al.
Publicado: (1986)

The electronic structure of amphoteric Sn dopants in III-V compound semiconductors
por: Weyer, G, et al.
Publicado: (1983)

Effect of disorder and defects in ion-implanted semiconductors: optical and photothermal characterization
por: Willardson, R K, et al.
Publicado: (1997)

Effect of disorder and defects in ion-implanted semiconductors: electrical and physiochemical characterization
por: Willardson, Robert K, et al.
Publicado: (2014)

A Mössbauer study of impurity-vacancy defects in copper
por: Andreasen, H, et al.
Publicado: (1982)

Isomer shifts and force constants of substitutional $^{119}$Sn impurity atoms in f.c.c. metals
por: Andreasen, H, et al.
Publicado: (1983)

Surface physics with radioactive ion beams
por: Haas, H
Publicado: (1993)

The Electronic Configuration of $^{121}Sb$ in Semiconductors
por: Weyer, G, et al.
Publicado: (1985)

Electron-positron-channelling and Mössbauer-effect studies of indium-vacancy complexes in ion-implanted nickel
por: Besold, B, et al.
Publicado: (1986)

Funny hill in a "warm bath": electron bulk perturbation induced by radioactive nuclei
por: Kondratev, V N, et al.
Publicado: (1995)

Cannot write session to /tmp/vufind_sessions/sess_lf0efqudbut7qqcuamqgpqejp2