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Annealing behaviour of high concentration of implanted Sb and Sn in silicon
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
1986
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.4028/www.scientific.net/MSF.10-12.1135 http://cds.cern.ch/record/264813 |
| _version_ | 1780886549048590336 |
|---|---|
| author | Weyer, G Nylandsted-Larsen, A Pedersen, F T Galloni, R Rizzoli, R |
| author_facet | Weyer, G Nylandsted-Larsen, A Pedersen, F T Galloni, R Rizzoli, R |
| author_sort | Weyer, G |
| collection | CERN |
| id | cern-264813 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 1986 |
| record_format | invenio |
| spelling | cern-2648132019-09-30T06:29:59Zdoi:10.4028/www.scientific.net/MSF.10-12.1135http://cds.cern.ch/record/264813engWeyer, GNylandsted-Larsen, APedersen, F TGalloni, RRizzoli, RAnnealing behaviour of high concentration of implanted Sb and Sn in siliconOther Fields of Physicsoai:cds.cern.ch:2648131986 |
| spellingShingle | Other Fields of Physics Weyer, G Nylandsted-Larsen, A Pedersen, F T Galloni, R Rizzoli, R Annealing behaviour of high concentration of implanted Sb and Sn in silicon |
| title | Annealing behaviour of high concentration of implanted Sb and Sn in silicon |
| title_full | Annealing behaviour of high concentration of implanted Sb and Sn in silicon |
| title_fullStr | Annealing behaviour of high concentration of implanted Sb and Sn in silicon |
| title_full_unstemmed | Annealing behaviour of high concentration of implanted Sb and Sn in silicon |
| title_short | Annealing behaviour of high concentration of implanted Sb and Sn in silicon |
| title_sort | annealing behaviour of high concentration of implanted sb and sn in silicon |
| topic | Other Fields of Physics |
| url | https://dx.doi.org/10.4028/www.scientific.net/MSF.10-12.1135 http://cds.cern.ch/record/264813 |
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