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Wide bandgap semiconductor power devices: materials, physics, design and applications

Detalles Bibliográficos
Autor principal: Baliga, B Jayant
Lenguaje:eng
Publicado: Elsevier Science & Technology 2018
Materias:
Acceso en línea:https://dx.doi.org/10.1016/C2016-0-04021-4
http://cds.cern.ch/record/2648353
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author Baliga, B Jayant
author_facet Baliga, B Jayant
author_sort Baliga, B Jayant
collection CERN
id cern-2648353
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2018
publisher Elsevier Science & Technology
record_format invenio
spelling cern-26483532021-04-21T18:39:26Zdoi:10.1016/C2016-0-04021-4http://cds.cern.ch/record/2648353engBaliga, B JayantWide bandgap semiconductor power devices: materials, physics, design and applicationsEngineeringElsevier Science & Technologyoai:cds.cern.ch:26483532018
spellingShingle Engineering
Baliga, B Jayant
Wide bandgap semiconductor power devices: materials, physics, design and applications
title Wide bandgap semiconductor power devices: materials, physics, design and applications
title_full Wide bandgap semiconductor power devices: materials, physics, design and applications
title_fullStr Wide bandgap semiconductor power devices: materials, physics, design and applications
title_full_unstemmed Wide bandgap semiconductor power devices: materials, physics, design and applications
title_short Wide bandgap semiconductor power devices: materials, physics, design and applications
title_sort wide bandgap semiconductor power devices: materials, physics, design and applications
topic Engineering
url https://dx.doi.org/10.1016/C2016-0-04021-4
http://cds.cern.ch/record/2648353
work_keys_str_mv AT baligabjayant widebandgapsemiconductorpowerdevicesmaterialsphysicsdesignandapplications