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Lattice location of ion-implanted dopants in GaAs using radioactive probes

Detalles Bibliográficos
Autores principales:	Winter, S, Blässer, S, Hofsäss, H C, Jahn, S G, Lindner, G, Recknagel, E
Lenguaje:	eng
Publicado:	1989
Materias:	Other Fields of Physics
Acceso en línea:	https://dx.doi.org/10.4028/www.scientific.net/MSF.38-41.1221 http://cds.cern.ch/record/264849

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