Cargando…
Characterization of Cd implanted and annealed GaAs and InP by perturbed angular correlation (PAC) spectroscopy
Autores principales: | Pfeiffer, Wolfgang, Deicher, M, Keller, R, Magerle, R, Pross, P, Skudlik, H, Wichert, T, Wolf, H, Forkel-Wirth, Doris, Moriya, N, Kalish, R |
---|---|
Lenguaje: | eng |
Publicado: |
1991
|
Materias: | |
Acceso en línea: | https://dx.doi.org/10.1016/0169-4332(91)90155-D http://cds.cern.ch/record/264862 |
Ejemplares similares
-
Annealing of damage in GaAs and InP after implantation of Cd and In
por: Pfeiffer, Wolfgang, et al.
Publicado: (1992) -
Cd-H pairs in GaAs: identification and stability
por: Pfeiffer, Wolfgang, et al.
Publicado: (1991) -
Annealing of Cd-implanted GaAs: defect removal, lattice site occupation, and electrical activation
por: Moriya, N, et al.
Publicado: (1993) -
Creation of Ga$_{As}$ antisites in GaAs by transmutation of radioactive $^{71}$As$_{As}$ to stable $^{71}$Ga$_{As}$
por: Magerle, R, et al.
Publicado: (1997) -
Acceptor-defect complexes in GaAs, studied by PAC spectroscopy
por: Baurichter, A, et al.
Publicado: (1989)