Cargando…
Combined Mössbauer and PAC investigation of impurity-defect complexes in ion-implanted GaP and GaAs
Autor principal: | Nielsen, K B |
---|---|
Lenguaje: | eng |
Publicado: |
1985
|
Materias: | |
Acceso en línea: | http://cds.cern.ch/record/264893 |
Ejemplares similares
-
Mössbauer study of a complex Sn-impurity defect in GaAs from implantations of radioactive $^{119}$In ions
por: Weyer, G, et al.
Publicado: (1980) -
Mössbauer Study of a Complex $^{119}Sn$ Impurity Defect in GaP
por: Weyer, G, et al.
Publicado: (1980) -
Low fluence implantations in GaAs: a Mössbauer spectroscopy investigation of individual and overlapping defect cascades
por: Andreasen, H, et al.
Publicado: (1992) -
Acceptor-defect complexes in GaAs, studied by PAC spectroscopy
por: Baurichter, A, et al.
Publicado: (1989) -
Implantation and diffusion of $^{73}$As in GaAs and GaP
por: Bösker, G, et al.
Publicado: (2000)