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$^{119}$Sn Mössbauer study of the implantation behaviour of $^{119}$In, $^{119}$Sn, $^{119m}$Sn, $^{119}$Sb and $^{119m}$Te ions in SiC

Detalles Bibliográficos
Autores principales:	Petersen, J W, Weyer, G, Loft, N H, Damgaard, S, Choyke, W J, Andreasen, H
Lenguaje:	eng
Publicado:	1985
Materias:	Other Fields of Physics
Acceso en línea:	https://dx.doi.org/10.1007/BF02060136 http://cds.cern.ch/record/264894

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