Cargando…

Identification of band-gap states by deep level transient spectroscopy on radioactive probes: the case of Au and Pt in silicon

Detalles Bibliográficos
Autores principales:	Petersen, J W, Nielsen, J
Lenguaje:	eng
Publicado:	1990
Materias:	Other Fields of Physics
Acceso en línea:	http://cds.cern.ch/record/264969

Ejemplares similares

Mössbauer study of $^{119}$Sn defects in silicon from ion implantations of radioactive $^{119}$In
por: Weyer, G, et al.
Publicado: (1980)

Site selective doping of compound semiconductors by ion implantation of radioactive nuclei
por: Weyer, G, et al.
Publicado: (1980)

Lattice location of ion-implanted dopants in GaAs using radioactive probes
por: Winter, S, et al.
Publicado: (1989)

Local investigation of impurities in wide band gap nanostructured oxides with radioactive probes
por: Carbonari, AW Instituto de Pesquisas Energeticas e Nucleares IPEN Sao Paulo Brazil, et al.
Publicado: (2016)

Diffusion of tellurium in silicon studied by the redistribution of an implanted source of radioactive 121Te.Si: Te
por: Rollert, R, et al.
Publicado: (1993)

Sn impurity defects in germanium from ion implantations of radioactive $^{119}$In
por: Weyer, G, et al.
Publicado: (1980)

Semiconductors probed by ultrafast laser spectroscopy
por: Alfano, R R
Publicado: (1985)

Semiconductors probed by ultrafast laser spectroscopy
por: Alfano, R R
Publicado: (1985)

Deep level anomalies in silicon doped with radioactive Au atoms
por: Bollmann, J, et al.
Publicado: (1999)

Achieving complete band gaps using low refractive index material
por: Liu, Dahe, et al.
Publicado: (2010)

Mössbauer study of a complex Sn-impurity defect in GaAs from implantations of radioactive $^{119}$In ions
por: Weyer, G, et al.
Publicado: (1980)

Measurement of weak radioactivity
por: Theodorsson , P
Publicado: (1996)

Radioactive tracer techniques
por: Schweitzer, Georg K, et al.
Publicado: (1949)

Handbook of radioactivity analysis
por: L'Annunziata, Michael F
Publicado: (2012)

Local investigation with radioactive probe of wide band gap oxides thin films doped with transition metals.
por: Carbonari, A W, et al.
Publicado: (2012)

Indium-defects complexes in silicon studied by perturbed angular correlation spectroscopy
por: Wichert, T, et al.
Publicado: (1989)

Lifetime spectroscopy: a method of defect characterization in silicon for photovoltaic applications
por: Rein, Stefan
Publicado: (2005)

The tin-vacancy pair defect in silicon
por: Damgaard, S, et al.
Publicado: (1981)

Diffusion of Au and Pt in amorphous silicon
por: Ulfert, W, et al.
Publicado: (1991)

Surface physics with radioactive ion beams
por: Haas, H
Publicado: (1993)

Workshop on Traps for Antimatter and Radioactive Nuclei
por: D'Auria, John M, et al.
Publicado: (1994)

Damage creation in silicon single crystals irradiated with 200 keV/atom $Au_{n}^{+}$ clusters
por: Canut, B, et al.
Publicado: (1999)

Photo-excited charge collection spectroscopy: probing the traps in field-effect transistors
por: Im, Seongil, et al.
Publicado: (2013)

Radioactivity: introduction and history, from the quantum to quarks
por: L'Annunziata, Michael F
Publicado: (2016)

The matrix method for radiological characterization of radioactive waste
por: Magistris, M
Publicado: (2007)

Applications of Mössbauer spectroscopy to investigations of defects in semiconductors
por: Nylandsted-Larsen, A, et al.
Publicado: (1988)

Mössbauer Study of a Complex $^{119}Sn$ Impurity Defect in GaP
por: Weyer, G, et al.
Publicado: (1980)

Comparison of impurity defect structures formed by ion implantations in amorphous and crystalline silicon
por: Weyer, G, et al.
Publicado: (1982)

Bonds and bands in semiconductors
por: Phillips, J
Publicado: (2012)

High resolution conversion spectroscopy of impurities in semiconductors
por: Petersen, J W, et al.
Publicado: (1992)

Solid-state and surface studies with radioactive ion beams
por: Haas, H
Publicado: (1991)

Far- and deep-ultraviolet spectroscopy
por: Ozaki, Yukihiro, et al.
Publicado: (2015)

High resolution conversion electron spectroscopy of valence electron configuration
por: Petersen, J W, et al.
Publicado: (1990)

Direct evidence for substitutional ion-implanted indium dopants in silicon
por: Lindner, G, et al.
Publicado: (1986)

Lattice location of ion-implanted radioactive dopants in compound semiconductors
por: Winter, S, et al.
Publicado: (1990)

Radioactivity and radiation: what they are, what they do, and how to harness them
por: Grupen, Claus, et al.
Publicado: (2016)

The clean deposition of radioactive isotopes on a single crystal surface
por: Weibler, W, et al.
Publicado: (1982)

Atomic energy in cosmic and human life: fifty years of radioactivity
por: Gamow, George A
Publicado: (1947)

Performance of the HPD minimum guidance systeme, pt 1
por: Gérard, J M, et al.
Publicado: (1967)

Results on Milady operation, pt 6
por: Powell, B W
Publicado: (1966)

Cannot write session to /tmp/vufind_sessions/sess_euse3l1b6mo6t3h96jmebaii4e