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Mössbauer study of $^{119}$Sn defects in silicon from ion implantations of radioactive $^{119}$In

Detalles Bibliográficos
Autores principales: Weyer, G, Damgaard, S, Petersen, J W, Heinemeier, J
Lenguaje:eng
Publicado: 1980
Materias:
Acceso en línea:http://cds.cern.ch/record/264974
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author Weyer, G
Damgaard, S
Petersen, J W
Heinemeier, J
author_facet Weyer, G
Damgaard, S
Petersen, J W
Heinemeier, J
author_sort Weyer, G
collection CERN
id cern-264974
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1980
record_format invenio
spelling cern-2649742019-09-30T06:29:59Zhttp://cds.cern.ch/record/264974engWeyer, GDamgaard, SPetersen, J WHeinemeier, JMössbauer study of $^{119}$Sn defects in silicon from ion implantations of radioactive $^{119}$InOther Fields of Physicsoai:cds.cern.ch:2649741980
spellingShingle Other Fields of Physics
Weyer, G
Damgaard, S
Petersen, J W
Heinemeier, J
Mössbauer study of $^{119}$Sn defects in silicon from ion implantations of radioactive $^{119}$In
title Mössbauer study of $^{119}$Sn defects in silicon from ion implantations of radioactive $^{119}$In
title_full Mössbauer study of $^{119}$Sn defects in silicon from ion implantations of radioactive $^{119}$In
title_fullStr Mössbauer study of $^{119}$Sn defects in silicon from ion implantations of radioactive $^{119}$In
title_full_unstemmed Mössbauer study of $^{119}$Sn defects in silicon from ion implantations of radioactive $^{119}$In
title_short Mössbauer study of $^{119}$Sn defects in silicon from ion implantations of radioactive $^{119}$In
title_sort mössbauer study of $^{119}$sn defects in silicon from ion implantations of radioactive $^{119}$in
topic Other Fields of Physics
url http://cds.cern.ch/record/264974
work_keys_str_mv AT weyerg mossbauerstudyof119sndefectsinsiliconfromionimplantationsofradioactive119in
AT damgaards mossbauerstudyof119sndefectsinsiliconfromionimplantationsofradioactive119in
AT petersenjw mossbauerstudyof119sndefectsinsiliconfromionimplantationsofradioactive119in
AT heinemeierj mossbauerstudyof119sndefectsinsiliconfromionimplantationsofradioactive119in