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Mössbauer study of $^{119}$Sn defects in silicon from ion implantations of radioactive $^{119}$In

Detalles Bibliográficos
Autores principales:	Weyer, G, Damgaard, S, Petersen, J W, Heinemeier, J
Lenguaje:	eng
Publicado:	1980
Materias:	Other Fields of Physics
Acceso en línea:	http://cds.cern.ch/record/264974

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