Cargando…

The Electronic Configuration of $^{121}Sb$ in Semiconductors

Detalles Bibliográficos
Autores principales:	Weyer, G, Andreasen, H, De Waard, H
Lenguaje:	eng
Publicado:	1985
Materias:	Other Fields of Physics
Acceso en línea:	https://dx.doi.org/10.1002/pssb.2221320122 http://cds.cern.ch/record/265011

Ejemplares similares

Mössbauer study of the electronic configuration of Sb donors and acceptors in semiconductors
por: Kemerink, G J, et al.
Publicado: (1988)

High resolution conversion electron spectroscopy of valence electron configuration
por: Petersen, J W, et al.
Publicado: (1990)

Defect structures in ion-implanted InSb
por: Weyer, G, et al.
Publicado: (1986)

Lattice and grain-boundary diffusion of $^{121}$Te in silver after radioisotope implantation at the ISOLDE
por: Geise, J, et al.
Publicado: (1986)

$^{119}$Sn Mössbauer study of the implantation behaviour of $^{119}$In, $^{119}$Sn, $^{119m}$Sn, $^{119}$Sb and $^{119m}$Te ions in SiC
por: Petersen, J W, et al.
Publicado: (1985)

Applications of Mössbauer spectroscopy to characterize highly-doped semiconductors
por: Weyer, G
Publicado: (1988)

Mössbauer studies of defects in ion implanted metals and semiconductors
por: Weyer, G
Publicado: (1988)

As-implanted lattice site of dopants in semiconductors
por: Hofsäss, H C, et al.
Publicado: (1986)

Annealing behaviour of high concentration of implanted Sb and Sn in silicon
por: Weyer, G, et al.
Publicado: (1986)

Diffusion of ion implanted Sn and Sb in heavily doped silicon
por: Andersen, P E, et al.
Publicado: (1988)

The effect of heavy doping on complex formation and diffusivity of Sb in Si
por: Nylandsted-Larsen, A, et al.
Publicado: (1988)

Applications of Mössbauer spectroscopy to investigations of defects in semiconductors
por: Nylandsted-Larsen, A, et al.
Publicado: (1988)

Site selective doping of compound semiconductors by ion implantation of radioactive nuclei
por: Weyer, G, et al.
Publicado: (1980)

High resolution conversion spectroscopy of impurities in semiconductors
por: Petersen, J W, et al.
Publicado: (1992)

Low fluence implantations in GaAs: a Mössbauer spectroscopy investigation of individual and overlapping defect cascades
por: Andreasen, H, et al.
Publicado: (1992)

Low fluence implantations in GaAs: a Mössbauer spectroscopy investigation of individual and overlapping damage cascade
por: Andreasen, H, et al.
Publicado: (1990)

A Mössbauer study of impurity-vacancy defects in copper
por: Andreasen, H, et al.
Publicado: (1982)

Isomer shifts and force constants of substitutional $^{119}$Sn impurity atoms in f.c.c. metals
por: Andreasen, H, et al.
Publicado: (1983)

Electronic properties of doped semiconductors
por: Shklovskii, Boris I, et al.
Publicado: (1984)

Systematic experimental and theoretical studies of the lattice vibrations of host atoms and substitutional Sn impurities in III-V semiconductors
por: Nielsen, O H, et al.
Publicado: (1982)

Advanced physics of electron transport in semiconductors and nanostructures
por: Fischetti, Massimo V, et al.
Publicado: (2015)

Rapid thermal annealing of ion-implanted Sb in silicon: a comparison of substitutional fractions from channeling, electrical and Mössbauer measurements
por: Nylandsted-Larsen, A, et al.
Publicado: (1985)

Internal oxidation of 5sp-impurities in nobel metals
por: Andreasen, H, et al.
Publicado: (1985)

Front-End electronics configuration system for CMS
por: Gras, P., et al.
Publicado: (2001)

Electron & nuclear spin dynamics in semiconductor nanostructures
por: Glazov, M M
Publicado: (2018)

Amorphous semiconductors: structural, optical and electronic properties
por: Morigaki, Kazuo, et al.
Publicado: (2016)

Semiconductor Nanostructures: Quantum States and Electronic Transport
por: Ihn, Thomas
Publicado: (2009)

Hyperfine interaction of Eu impurities implanted in nickel
por: Niessen, L, et al.
Publicado: (1990)

Semiconductors
por: Schulz, M, et al.
Publicado: (1984)

Semiconductors
por: Schulz, M, et al.
Publicado: (1984)

A novel type of Auger electron Mössbauer spectroscopy
por: Weyer, G
Publicado: (1990)

Problems of linear electron (polaron) transport theory in semiconductors
por: Klinger, M I, et al.
Publicado: (1979)

Readout Electronics Tests and Integration of the ATLAS Semiconductor Tracker
por: Mitsou, Vasiliki A.
Publicado: (2006)

Electric field gradient for indium in As, Sb and Bi
por: Haas, H, et al.
Publicado: (1981)

Lattice location of nuclear probes by electron and positron channeling
por: Hofsäss, H C, et al.
Publicado: (1987)

Diffusion of tellurium in silicon studied by the redistribution of an implanted source of radioactive 121Te.Si: Te
por: Rollert, R, et al.
Publicado: (1993)

III–V semiconductors
por: Freyhardt, H C
Publicado: (1980)

Emission channeling studies in semiconductors
por: Hofsäss, H C, et al.
Publicado: (1992)

Ultrafast spectroscopy of semiconductors and semiconductor nanostructures
por: Shah, Jagdeep
Publicado: (1999)

Ternary chalcopyrite semiconductors
por: Shay, J L, et al.
Publicado: (2013)

Cannot write session to /tmp/vufind_sessions/sess_juo5i81n40pgik7t3a12sgdi3g