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High resolution conversion spectroscopy of impurities in semiconductors

Detalles Bibliográficos
Autores principales: Petersen, J W, Weyer, G, Svane, A, Holzschuh, E, Kündig, W
Lenguaje:eng
Publicado: 1992
Materias:
Acceso en línea:https://dx.doi.org/10.1016/0168-583X(92)95191-S
http://cds.cern.ch/record/265012
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author Petersen, J W
Weyer, G
Svane, A
Holzschuh, E
Kündig, W
author_facet Petersen, J W
Weyer, G
Svane, A
Holzschuh, E
Kündig, W
author_sort Petersen, J W
collection CERN
id cern-265012
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1992
record_format invenio
spelling cern-2650122019-09-30T06:29:59Zdoi:10.1016/0168-583X(92)95191-Shttp://cds.cern.ch/record/265012engPetersen, J WWeyer, GSvane, AHolzschuh, EKündig, WHigh resolution conversion spectroscopy of impurities in semiconductorsOther Fields of Physicsoai:cds.cern.ch:2650121992
spellingShingle Other Fields of Physics
Petersen, J W
Weyer, G
Svane, A
Holzschuh, E
Kündig, W
High resolution conversion spectroscopy of impurities in semiconductors
title High resolution conversion spectroscopy of impurities in semiconductors
title_full High resolution conversion spectroscopy of impurities in semiconductors
title_fullStr High resolution conversion spectroscopy of impurities in semiconductors
title_full_unstemmed High resolution conversion spectroscopy of impurities in semiconductors
title_short High resolution conversion spectroscopy of impurities in semiconductors
title_sort high resolution conversion spectroscopy of impurities in semiconductors
topic Other Fields of Physics
url https://dx.doi.org/10.1016/0168-583X(92)95191-S
http://cds.cern.ch/record/265012
work_keys_str_mv AT petersenjw highresolutionconversionspectroscopyofimpuritiesinsemiconductors
AT weyerg highresolutionconversionspectroscopyofimpuritiesinsemiconductors
AT svanea highresolutionconversionspectroscopyofimpuritiesinsemiconductors
AT holzschuhe highresolutionconversionspectroscopyofimpuritiesinsemiconductors
AT kundigw highresolutionconversionspectroscopyofimpuritiesinsemiconductors