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An application of extensions of the Ramo-Shockley theorem to signals in silicon sensors
We discuss an extension of the Ramo–Shockley theorem that allows the calculation of signals in detectors that contain non-linear materials of arbitrary permittivity and finite conductivity (volume resistivity) as well as a static space-charge. The readout-electrodes can be connected by an arbitrary...
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| Lenguaje: | eng |
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2018
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| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2019.06.056 http://cds.cern.ch/record/2653080 |