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Design and characterization of the monolithic matrices of the H35DEMO chip

The H35DEMO chip is a HV/HR-MAPS demonstrator of 18.49 mm x 24.4 mm, fabricated with a 0.35 µm HVCMOS process from AMS in four different substrate resistivities. The chip is divided into four independent matrices with a pixel size of 50 µm x 250 µm. Two of the matrices are fully monolithic and inclu...

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Autores principales: Casanova Mohr, R., Cavallaro, E., Föster, F., Grinstein, S., Peric, I., Puigdengoles, C., Terzo, S., Vilella, E.
Formato: info:eu-repo/semantics/article
Lenguaje:eng
Publicado: 2019
Materias:
Acceso en línea:http://cds.cern.ch/record/2655732
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author Casanova Mohr, R.
Cavallaro, E.
Föster, F.
Grinstein, S.
Peric, I.
Puigdengoles, C.
Terzo, S.
Vilella, E.
author_facet Casanova Mohr, R.
Cavallaro, E.
Föster, F.
Grinstein, S.
Peric, I.
Puigdengoles, C.
Terzo, S.
Vilella, E.
author_sort Casanova Mohr, R.
collection CERN
description The H35DEMO chip is a HV/HR-MAPS demonstrator of 18.49 mm x 24.4 mm, fabricated with a 0.35 µm HVCMOS process from AMS in four different substrate resistivities. The chip is divided into four independent matrices with a pixel size of 50 µm x 250 µm. Two of the matrices are fully monolithic and include the digital readout electronics at the periphery. This contribution describes the two standalone matrices of the H35DEMO chip and presents results of the beam tests carried out with unirradiated and irradiated samples with different substrate resistivities.
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spelling cern-26557322019-09-30T06:29:59Z http://cds.cern.ch/record/2655732 eng Casanova Mohr, R. Cavallaro, E. Föster, F. Grinstein, S. Peric, I. Puigdengoles, C. Terzo, S. Vilella, E. Design and characterization of the monolithic matrices of the H35DEMO chip Detectors and Experimental Techniques 6: Novel high voltage and resistive CMOS sensors The H35DEMO chip is a HV/HR-MAPS demonstrator of 18.49 mm x 24.4 mm, fabricated with a 0.35 µm HVCMOS process from AMS in four different substrate resistivities. The chip is divided into four independent matrices with a pixel size of 50 µm x 250 µm. Two of the matrices are fully monolithic and include the digital readout electronics at the periphery. This contribution describes the two standalone matrices of the H35DEMO chip and presents results of the beam tests carried out with unirradiated and irradiated samples with different substrate resistivities. info:eu-repo/grantAgreement/EC/FP7/654168 info:eu-repo/semantics/openAccess Education Level info:eu-repo/semantics/article http://cds.cern.ch/record/2655732 2019
spellingShingle Detectors and Experimental Techniques
6: Novel high voltage and resistive CMOS sensors
Casanova Mohr, R.
Cavallaro, E.
Föster, F.
Grinstein, S.
Peric, I.
Puigdengoles, C.
Terzo, S.
Vilella, E.
Design and characterization of the monolithic matrices of the H35DEMO chip
title Design and characterization of the monolithic matrices of the H35DEMO chip
title_full Design and characterization of the monolithic matrices of the H35DEMO chip
title_fullStr Design and characterization of the monolithic matrices of the H35DEMO chip
title_full_unstemmed Design and characterization of the monolithic matrices of the H35DEMO chip
title_short Design and characterization of the monolithic matrices of the H35DEMO chip
title_sort design and characterization of the monolithic matrices of the h35demo chip
topic Detectors and Experimental Techniques
6: Novel high voltage and resistive CMOS sensors
url http://cds.cern.ch/record/2655732
http://cds.cern.ch/record/2655732
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