Characterization Results of a HVCMOS Sensor for ATLAS

High-voltage CMOS (HVCMOS) pixel sensors are depleted monolithic active n-in-p diode pixel sensors implemented in standard commercial CMOS processes. A substantial part of the readout electronics is placed inside each pixel. Due to high radiation tolerance and fast signal generation, HVCMOS sensors...

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Detalles Bibliográficos
Autores principales: Ehrler, F., Benoit, M., Dannheim, D., Kiehn, M., Nurnberg, A., Peric, I., Prathapan, M., Schimassek, R., Vanat, T., Vicente, M., Weber, A., Zhang, H.
Formato: info:eu-repo/semantics/article
Lenguaje:eng
Publicado: Nucl. Instrum. Methods Phys. Res., A 2019
Materias:
Detectors and Experimental Techniques
6: Novel high voltage and resistive CMOS sensors
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2018.08.069
http://cds.cern.ch/record/2658072
Descripción
Sumario:High-voltage CMOS (HVCMOS) pixel sensors are depleted monolithic active n-in-p diode pixel sensors implemented in standard commercial CMOS processes. A substantial part of the readout electronics is placed inside each pixel. Due to high radiation tolerance and fast signal generation, HVCMOS sensors are going to be used (Mu3e, PSI) or are suggested for usage (ATLAS and CLIC, CERN) in High Energy Physics experiments. In this article characterization results of the ATLASpix Simple sensor are presented. Special attention was paid to the novel time-over-threshold (ToT) measurement with adaptive sampling rate.

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