Characterization Results of a HVCMOS Sensor for ATLAS

High-voltage CMOS (HVCMOS) pixel sensors are depleted monolithic active n-in-p diode pixel sensors implemented in standard commercial CMOS processes. A substantial part of the readout electronics is placed inside each pixel. Due to high radiation tolerance and fast signal generation, HVCMOS sensors...

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Detalles Bibliográficos
Autores principales: Ehrler, F., Benoit, M., Dannheim, D., Kiehn, M., Nurnberg, A., Peric, I., Prathapan, M., Schimassek, R., Vanat, T., Vicente, M., Weber, A., Zhang, H.
Formato: info:eu-repo/semantics/article
Lenguaje:eng
Publicado: Nucl. Instrum. Methods Phys. Res., A 2019
Materias:
Detectors and Experimental Techniques
6: Novel high voltage and resistive CMOS sensors
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2018.08.069
http://cds.cern.ch/record/2658072
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author Ehrler, F.
Benoit, M.
Dannheim, D.
Kiehn, M.
Nurnberg, A.
Peric, I.
Prathapan, M.
Schimassek, R.
Vanat, T.
Vicente, M.
Weber, A.
Zhang, H.
author_facet Ehrler, F.
Benoit, M.
Dannheim, D.
Kiehn, M.
Nurnberg, A.
Peric, I.
Prathapan, M.
Schimassek, R.
Vanat, T.
Vicente, M.
Weber, A.
Zhang, H.
author_sort Ehrler, F.
collection CERN
description High-voltage CMOS (HVCMOS) pixel sensors are depleted monolithic active n-in-p diode pixel sensors implemented in standard commercial CMOS processes. A substantial part of the readout electronics is placed inside each pixel. Due to high radiation tolerance and fast signal generation, HVCMOS sensors are going to be used (Mu3e, PSI) or are suggested for usage (ATLAS and CLIC, CERN) in High Energy Physics experiments. In this article characterization results of the ATLASpix Simple sensor are presented. Special attention was paid to the novel time-over-threshold (ToT) measurement with adaptive sampling rate.
format info:eu-repo/semantics/article
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institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2019
publisher Nucl. Instrum. Methods Phys. Res., A
record_format invenio
spelling cern-26580722020-03-30T14:08:34Z doi:10.1016/j.nima.2018.08.069 http://cds.cern.ch/record/2658072 eng Ehrler, F. Benoit, M. Dannheim, D. Kiehn, M. Nurnberg, A. Peric, I. Prathapan, M. Schimassek, R. Vanat, T. Vicente, M. Weber, A. Zhang, H. Characterization Results of a HVCMOS Sensor for ATLAS Detectors and Experimental Techniques 6: Novel high voltage and resistive CMOS sensors High-voltage CMOS (HVCMOS) pixel sensors are depleted monolithic active n-in-p diode pixel sensors implemented in standard commercial CMOS processes. A substantial part of the readout electronics is placed inside each pixel. Due to high radiation tolerance and fast signal generation, HVCMOS sensors are going to be used (Mu3e, PSI) or are suggested for usage (ATLAS and CLIC, CERN) in High Energy Physics experiments. In this article characterization results of the ATLASpix Simple sensor are presented. Special attention was paid to the novel time-over-threshold (ToT) measurement with adaptive sampling rate. info:eu-repo/grantAgreement/EC/FP7/654168 info:eu-repo/semantics/openAccess Education Level info:eu-repo/semantics/article http://cds.cern.ch/record/2658072 Nucl. Instrum. Methods Phys. Res., A Nucl. Instrum. Methods Phys. Res., A, (2019) pp. 654-656 2019
spellingShingle Detectors and Experimental Techniques
6: Novel high voltage and resistive CMOS sensors
Ehrler, F.
Benoit, M.
Dannheim, D.
Kiehn, M.
Nurnberg, A.
Peric, I.
Prathapan, M.
Schimassek, R.
Vanat, T.
Vicente, M.
Weber, A.
Zhang, H.
Characterization Results of a HVCMOS Sensor for ATLAS
title Characterization Results of a HVCMOS Sensor for ATLAS
title_full Characterization Results of a HVCMOS Sensor for ATLAS
title_fullStr Characterization Results of a HVCMOS Sensor for ATLAS
title_full_unstemmed Characterization Results of a HVCMOS Sensor for ATLAS
title_short Characterization Results of a HVCMOS Sensor for ATLAS
title_sort characterization results of a hvcmos sensor for atlas
topic Detectors and Experimental Techniques
6: Novel high voltage and resistive CMOS sensors
url https://dx.doi.org/10.1016/j.nima.2018.08.069
http://cds.cern.ch/record/2658072
http://cds.cern.ch/record/2658072
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