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Analytical modelling of breakdown effect in graphene nanoribbon field effect transistor

Detalles Bibliográficos
Autores principales: Amiri, Iraj Sadegh, Ghadiry, Mahdiar
Lenguaje:eng
Publicado: Springer 2017
Materias:
Acceso en línea:http://cds.cern.ch/record/2663468
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author Amiri, Iraj Sadegh
Ghadiry, Mahdiar
author_facet Amiri, Iraj Sadegh
Ghadiry, Mahdiar
author_sort Amiri, Iraj Sadegh
collection CERN
id cern-2663468
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2017
publisher Springer
record_format invenio
spelling cern-26634682021-04-21T18:30:49Zhttp://cds.cern.ch/record/2663468engAmiri, Iraj SadeghGhadiry, MahdiarAnalytical modelling of breakdown effect in graphene nanoribbon field effect transistorEngineeringSpringeroai:cds.cern.ch:26634682017
spellingShingle Engineering
Amiri, Iraj Sadegh
Ghadiry, Mahdiar
Analytical modelling of breakdown effect in graphene nanoribbon field effect transistor
title Analytical modelling of breakdown effect in graphene nanoribbon field effect transistor
title_full Analytical modelling of breakdown effect in graphene nanoribbon field effect transistor
title_fullStr Analytical modelling of breakdown effect in graphene nanoribbon field effect transistor
title_full_unstemmed Analytical modelling of breakdown effect in graphene nanoribbon field effect transistor
title_short Analytical modelling of breakdown effect in graphene nanoribbon field effect transistor
title_sort analytical modelling of breakdown effect in graphene nanoribbon field effect transistor
topic Engineering
url http://cds.cern.ch/record/2663468
work_keys_str_mv AT amiriirajsadegh analyticalmodellingofbreakdowneffectingraphenenanoribbonfieldeffecttransistor
AT ghadirymahdiar analyticalmodellingofbreakdowneffectingraphenenanoribbonfieldeffecttransistor