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Gain Stabilization of SiPMs and Afterpulsing

The gain of silicon photomultipliers increases with bias voltage and decreases with temperature. To operate SiPMs at stable gain, the bias voltage can be readjusted to compensate for temperature changes. We have tested this concept with 30 SiPMs from three manufacturers in a climate chamber at CERN...

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Detalles Bibliográficos
Autores principales: Eigen, G., Tret, A., Zalieckas, J., Cvach, J., Kvasnicka, J., Polak, I.
Formato: info:eu-repo/semantics/article
Lenguaje:eng
Publicado: 2019
Materias:
Acceso en línea:http://cds.cern.ch/record/2672167
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author Eigen, G.
Tret, A.
Zalieckas, J.
Cvach, J.
Kvasnicka, J.
Polak, I.
author_facet Eigen, G.
Tret, A.
Zalieckas, J.
Cvach, J.
Kvasnicka, J.
Polak, I.
author_sort Eigen, G.
collection CERN
description The gain of silicon photomultipliers increases with bias voltage and decreases with temperature. To operate SiPMs at stable gain, the bias voltage can be readjusted to compensate for temperature changes. We have tested this concept with 30 SiPMs from three manufacturers in a climate chamber at CERN varying the temperature from 1 degree C to 48 degrees C. We built an adaptive power supply that is based on a linear dependence of bias voltage versus temperature. With one selected dVb=dT value, we stabilized four SiPMs simultaneously. We fullled our goal of stabilizing most SiPMs with gain changes of less than 0.5% in the 20-30 degrees C temperature range. We studied afterpulsing of SiPMs for dierent temperatures and bias voltages.
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spelling cern-26721672019-09-30T06:29:59Z http://cds.cern.ch/record/2672167 eng Eigen, G. Tret, A. Zalieckas, J. Cvach, J. Kvasnicka, J. Polak, I. Gain Stabilization of SiPMs and Afterpulsing Detectors and Experimental Techniques 14: Infrastructure for advanced calorimeters The gain of silicon photomultipliers increases with bias voltage and decreases with temperature. To operate SiPMs at stable gain, the bias voltage can be readjusted to compensate for temperature changes. We have tested this concept with 30 SiPMs from three manufacturers in a climate chamber at CERN varying the temperature from 1 degree C to 48 degrees C. We built an adaptive power supply that is based on a linear dependence of bias voltage versus temperature. With one selected dVb=dT value, we stabilized four SiPMs simultaneously. We fullled our goal of stabilizing most SiPMs with gain changes of less than 0.5% in the 20-30 degrees C temperature range. We studied afterpulsing of SiPMs for dierent temperatures and bias voltages. info:eu-repo/grantAgreement/EC/FP7/654168 info:eu-repo/semantics/openAccess Education Level info:eu-repo/semantics/article http://cds.cern.ch/record/2672167 2019
spellingShingle Detectors and Experimental Techniques
14: Infrastructure for advanced calorimeters
Eigen, G.
Tret, A.
Zalieckas, J.
Cvach, J.
Kvasnicka, J.
Polak, I.
Gain Stabilization of SiPMs and Afterpulsing
title Gain Stabilization of SiPMs and Afterpulsing
title_full Gain Stabilization of SiPMs and Afterpulsing
title_fullStr Gain Stabilization of SiPMs and Afterpulsing
title_full_unstemmed Gain Stabilization of SiPMs and Afterpulsing
title_short Gain Stabilization of SiPMs and Afterpulsing
title_sort gain stabilization of sipms and afterpulsing
topic Detectors and Experimental Techniques
14: Infrastructure for advanced calorimeters
url http://cds.cern.ch/record/2672167
http://cds.cern.ch/record/2672167
work_keys_str_mv AT eigeng gainstabilizationofsipmsandafterpulsing
AT treta gainstabilizationofsipmsandafterpulsing
AT zalieckasj gainstabilizationofsipmsandafterpulsing
AT cvachj gainstabilizationofsipmsandafterpulsing
AT kvasnickaj gainstabilizationofsipmsandafterpulsing
AT polaki gainstabilizationofsipmsandafterpulsing