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Ferroelectricity in doped hafnium oxide: materials properties and devices

Detalles Bibliográficos
Autores principales: Schroeder, Uwe, Hwang, Cheol Seong, Funakubo, Hiroshi
Lenguaje:eng
Publicado: Elsevier Science & Technology 2019
Materias:
Acceso en línea:http://cds.cern.ch/record/2675600
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author Schroeder, Uwe
Hwang, Cheol Seong
Funakubo, Hiroshi
author_facet Schroeder, Uwe
Hwang, Cheol Seong
Funakubo, Hiroshi
author_sort Schroeder, Uwe
collection CERN
id cern-2675600
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2019
publisher Elsevier Science & Technology
record_format invenio
spelling cern-26756002021-04-21T18:24:32Zhttp://cds.cern.ch/record/2675600engSchroeder, UweHwang, Cheol SeongFunakubo, HiroshiFerroelectricity in doped hafnium oxide: materials properties and devicesEngineeringElsevier Science & Technologyoai:cds.cern.ch:26756002019
spellingShingle Engineering
Schroeder, Uwe
Hwang, Cheol Seong
Funakubo, Hiroshi
Ferroelectricity in doped hafnium oxide: materials properties and devices
title Ferroelectricity in doped hafnium oxide: materials properties and devices
title_full Ferroelectricity in doped hafnium oxide: materials properties and devices
title_fullStr Ferroelectricity in doped hafnium oxide: materials properties and devices
title_full_unstemmed Ferroelectricity in doped hafnium oxide: materials properties and devices
title_short Ferroelectricity in doped hafnium oxide: materials properties and devices
title_sort ferroelectricity in doped hafnium oxide: materials properties and devices
topic Engineering
url http://cds.cern.ch/record/2675600
work_keys_str_mv AT schroederuwe ferroelectricityindopedhafniumoxidematerialspropertiesanddevices
AT hwangcheolseong ferroelectricityindopedhafniumoxidematerialspropertiesanddevices
AT funakubohiroshi ferroelectricityindopedhafniumoxidematerialspropertiesanddevices