Proton-Induced Radiation Effects in MAROC3, a full readout 0.35 µm SiGe ASIC

The MAROC chip was dedicated to MaPMT readout, and its third generation was backup solution in the front-end electronics of the RICH-LHCb Upgrade. Given the expected radiation environment for RICH, the MAROC3 was tested with 35 MeV proton beam at the Nuclear Physics Institute in Juelich, Germany. Investigated samples had the behavior recorded using a dedicated test bench. An increasing in power consumption followed by a rapid annealing - which proceeds at room temperature – was observed. The threshold for TID effects was found between 50 - 100 krad TID (Si), for a TID rate of about 30-170 rad/s.