Proton-Induced Radiation Effects in MAROC3, a full readout 0.35 µm SiGe ASIC

The MAROC chip was dedicated to MaPMT readout, and its third generation was backup solution in the front-end electronics of the RICH-LHCb Upgrade. Given the expected radiation environment for RICH, the MAROC3 was tested with 35 MeV proton beam at the Nuclear Physics Institute in Juelich, Germany. In...

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Autor principal: Cojocariu, Lucian Nicolae
Lenguaje:eng
Publicado: 2019
Acceso en línea:http://cds.cern.ch/record/2689073
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author Cojocariu, Lucian Nicolae
author_facet Cojocariu, Lucian Nicolae
author_sort Cojocariu, Lucian Nicolae
collection CERN
description The MAROC chip was dedicated to MaPMT readout, and its third generation was backup solution in the front-end electronics of the RICH-LHCb Upgrade. Given the expected radiation environment for RICH, the MAROC3 was tested with 35 MeV proton beam at the Nuclear Physics Institute in Juelich, Germany. Investigated samples had the behavior recorded using a dedicated test bench. An increasing in power consumption followed by a rapid annealing - which proceeds at room temperature – was observed. The threshold for TID effects was found between 50 - 100 krad TID (Si), for a TID rate of about 30-170 rad/s.
id cern-2689073
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2019
record_format invenio
spelling cern-26890732019-09-30T06:29:59Zhttp://cds.cern.ch/record/2689073engCojocariu, Lucian NicolaeProton-Induced Radiation Effects in MAROC3, a full readout 0.35 µm SiGe ASICThe MAROC chip was dedicated to MaPMT readout, and its third generation was backup solution in the front-end electronics of the RICH-LHCb Upgrade. Given the expected radiation environment for RICH, the MAROC3 was tested with 35 MeV proton beam at the Nuclear Physics Institute in Juelich, Germany. Investigated samples had the behavior recorded using a dedicated test bench. An increasing in power consumption followed by a rapid annealing - which proceeds at room temperature – was observed. The threshold for TID effects was found between 50 - 100 krad TID (Si), for a TID rate of about 30-170 rad/s.Poster-2019-704oai:cds.cern.ch:26890732019-09-03
spellingShingle Cojocariu, Lucian Nicolae
Proton-Induced Radiation Effects in MAROC3, a full readout 0.35 µm SiGe ASIC
title Proton-Induced Radiation Effects in MAROC3, a full readout 0.35 µm SiGe ASIC
title_full Proton-Induced Radiation Effects in MAROC3, a full readout 0.35 µm SiGe ASIC
title_fullStr Proton-Induced Radiation Effects in MAROC3, a full readout 0.35 µm SiGe ASIC
title_full_unstemmed Proton-Induced Radiation Effects in MAROC3, a full readout 0.35 µm SiGe ASIC
title_short Proton-Induced Radiation Effects in MAROC3, a full readout 0.35 µm SiGe ASIC
title_sort proton-induced radiation effects in maroc3, a full readout 0.35 µm sige asic
url http://cds.cern.ch/record/2689073
work_keys_str_mv AT cojocariuluciannicolae protoninducedradiationeffectsinmaroc3afullreadout035μmsigeasic

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