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Epitaxial growth of III-nitride compounds: computational approach

Detalles Bibliográficos
Autores principales: Matsuoka, Takashi, Kangawa, Yoshihiro
Lenguaje:eng
Publicado: Springer 2018
Materias:
Acceso en línea:http://cds.cern.ch/record/2697972
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author Matsuoka, Takashi
Kangawa, Yoshihiro
author_facet Matsuoka, Takashi
Kangawa, Yoshihiro
author_sort Matsuoka, Takashi
collection CERN
id cern-2697972
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2018
publisher Springer
record_format invenio
spelling cern-26979722021-04-21T18:18:12Zhttp://cds.cern.ch/record/2697972engMatsuoka, TakashiKangawa, YoshihiroEpitaxial growth of III-nitride compounds: computational approachEngineeringSpringeroai:cds.cern.ch:26979722018
spellingShingle Engineering
Matsuoka, Takashi
Kangawa, Yoshihiro
Epitaxial growth of III-nitride compounds: computational approach
title Epitaxial growth of III-nitride compounds: computational approach
title_full Epitaxial growth of III-nitride compounds: computational approach
title_fullStr Epitaxial growth of III-nitride compounds: computational approach
title_full_unstemmed Epitaxial growth of III-nitride compounds: computational approach
title_short Epitaxial growth of III-nitride compounds: computational approach
title_sort epitaxial growth of iii-nitride compounds: computational approach
topic Engineering
url http://cds.cern.ch/record/2697972
work_keys_str_mv AT matsuokatakashi epitaxialgrowthofiiinitridecompoundscomputationalapproach
AT kangawayoshihiro epitaxialgrowthofiiinitridecompoundscomputationalapproach