Cargando…
Epitaxial growth of III-nitride compounds: computational approach
Autores principales: | , |
---|---|
Lenguaje: | eng |
Publicado: |
Springer
2018
|
Materias: | |
Acceso en línea: | http://cds.cern.ch/record/2697972 |
_version_ | 1780964257001635840 |
---|---|
author | Matsuoka, Takashi Kangawa, Yoshihiro |
author_facet | Matsuoka, Takashi Kangawa, Yoshihiro |
author_sort | Matsuoka, Takashi |
collection | CERN |
id | cern-2697972 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2018 |
publisher | Springer |
record_format | invenio |
spelling | cern-26979722021-04-21T18:18:12Zhttp://cds.cern.ch/record/2697972engMatsuoka, TakashiKangawa, YoshihiroEpitaxial growth of III-nitride compounds: computational approachEngineeringSpringeroai:cds.cern.ch:26979722018 |
spellingShingle | Engineering Matsuoka, Takashi Kangawa, Yoshihiro Epitaxial growth of III-nitride compounds: computational approach |
title | Epitaxial growth of III-nitride compounds: computational approach |
title_full | Epitaxial growth of III-nitride compounds: computational approach |
title_fullStr | Epitaxial growth of III-nitride compounds: computational approach |
title_full_unstemmed | Epitaxial growth of III-nitride compounds: computational approach |
title_short | Epitaxial growth of III-nitride compounds: computational approach |
title_sort | epitaxial growth of iii-nitride compounds: computational approach |
topic | Engineering |
url | http://cds.cern.ch/record/2697972 |
work_keys_str_mv | AT matsuokatakashi epitaxialgrowthofiiinitridecompoundscomputationalapproach AT kangawayoshihiro epitaxialgrowthofiiinitridecompoundscomputationalapproach |