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2D semiconductor materials and devices
| Autores principales: | , , |
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| Lenguaje: | eng |
| Publicado: |
Elsevier
2019
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/2707443 |
| _version_ | 1780964935226884096 |
|---|---|
| author | Chi, Dongzhi Goh, K E Johnson Wee, Andrew T S |
| author_facet | Chi, Dongzhi Goh, K E Johnson Wee, Andrew T S |
| author_sort | Chi, Dongzhi |
| collection | CERN |
| id | cern-2707443 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 2019 |
| publisher | Elsevier |
| record_format | invenio |
| spelling | cern-27074432021-04-21T18:11:23Zhttp://cds.cern.ch/record/2707443engChi, DongzhiGoh, K E JohnsonWee, Andrew T S2D semiconductor materials and devicesEngineeringElsevieroai:cds.cern.ch:27074432019 |
| spellingShingle | Engineering Chi, Dongzhi Goh, K E Johnson Wee, Andrew T S 2D semiconductor materials and devices |
| title | 2D semiconductor materials and devices |
| title_full | 2D semiconductor materials and devices |
| title_fullStr | 2D semiconductor materials and devices |
| title_full_unstemmed | 2D semiconductor materials and devices |
| title_short | 2D semiconductor materials and devices |
| title_sort | 2d semiconductor materials and devices |
| topic | Engineering |
| url | http://cds.cern.ch/record/2707443 |
| work_keys_str_mv | AT chidongzhi 2dsemiconductormaterialsanddevices AT gohkejohnson 2dsemiconductormaterialsanddevices AT weeandrewts 2dsemiconductormaterialsanddevices |