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Vapor crystal growth and characterization: ZnSe and related II–VI compound semiconductors

The book describes developments in the crystal growth of bulk II-VI semiconductor materials. A fundamental, systematic, and in-depth study of the physical vapor transport (PVT) growth process is the key to producing high-quality single crystals of semiconductors. As such, the book offers a comprehen...

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Detalles Bibliográficos
Autor principal: Su, Ching-Hua
Lenguaje:eng
Publicado: Springer 2020
Materias:
Acceso en línea:https://dx.doi.org/10.1007/978-3-030-39655-8
http://cds.cern.ch/record/2708696
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author Su, Ching-Hua
author_facet Su, Ching-Hua
author_sort Su, Ching-Hua
collection CERN
description The book describes developments in the crystal growth of bulk II-VI semiconductor materials. A fundamental, systematic, and in-depth study of the physical vapor transport (PVT) growth process is the key to producing high-quality single crystals of semiconductors. As such, the book offers a comprehensive overview of the extensive studies on ZnSe and related II-VI wide bandgap compound semiconductors, such as CdS, CdTe, ZnTe, ZnSeTe and ZnSeS. Further, it shows the detailed steps for the growth of bulk crystals enabling optical devices which can operate in the visible spectrum for applications such as blue light emitting diodes, lasers for optical displays and in the mid-IR wavelength range, high density recording, and military communications. The book then discusses the advantages of crystallization from vapor compared to the conventional melt growth: lower processing temperatures, the purification process associated with PVT, and the improved surface morphology of the grown crystals, as well as the necessary drawbacks to the PVT process, such as the low and inconsistent growth rates and the low yield of single crystals. By presenting in-situ measurements of transport rate, partial pressures and interferometry, as well as visual observations, the book provides detailed insights into in the kinetics during the PVT process. This book is intended for graduate students and professionals in materials science as well as engineers preparing and developing optical devices with semiconductors.
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spelling cern-27086962021-04-21T18:10:36Zdoi:10.1007/978-3-030-39655-8http://cds.cern.ch/record/2708696engSu, Ching-HuaVapor crystal growth and characterization: ZnSe and related II–VI compound semiconductorsOther Fields of PhysicsThe book describes developments in the crystal growth of bulk II-VI semiconductor materials. A fundamental, systematic, and in-depth study of the physical vapor transport (PVT) growth process is the key to producing high-quality single crystals of semiconductors. As such, the book offers a comprehensive overview of the extensive studies on ZnSe and related II-VI wide bandgap compound semiconductors, such as CdS, CdTe, ZnTe, ZnSeTe and ZnSeS. Further, it shows the detailed steps for the growth of bulk crystals enabling optical devices which can operate in the visible spectrum for applications such as blue light emitting diodes, lasers for optical displays and in the mid-IR wavelength range, high density recording, and military communications. The book then discusses the advantages of crystallization from vapor compared to the conventional melt growth: lower processing temperatures, the purification process associated with PVT, and the improved surface morphology of the grown crystals, as well as the necessary drawbacks to the PVT process, such as the low and inconsistent growth rates and the low yield of single crystals. By presenting in-situ measurements of transport rate, partial pressures and interferometry, as well as visual observations, the book provides detailed insights into in the kinetics during the PVT process. This book is intended for graduate students and professionals in materials science as well as engineers preparing and developing optical devices with semiconductors.Springeroai:cds.cern.ch:27086962020
spellingShingle Other Fields of Physics
Su, Ching-Hua
Vapor crystal growth and characterization: ZnSe and related II–VI compound semiconductors
title Vapor crystal growth and characterization: ZnSe and related II–VI compound semiconductors
title_full Vapor crystal growth and characterization: ZnSe and related II–VI compound semiconductors
title_fullStr Vapor crystal growth and characterization: ZnSe and related II–VI compound semiconductors
title_full_unstemmed Vapor crystal growth and characterization: ZnSe and related II–VI compound semiconductors
title_short Vapor crystal growth and characterization: ZnSe and related II–VI compound semiconductors
title_sort vapor crystal growth and characterization: znse and related ii–vi compound semiconductors
topic Other Fields of Physics
url https://dx.doi.org/10.1007/978-3-030-39655-8
http://cds.cern.ch/record/2708696
work_keys_str_mv AT suchinghua vaporcrystalgrowthandcharacterizationznseandrelatediivicompoundsemiconductors