Radiation hardness of the Low Gain Avalanche Diodes developed by NDL and IHEP in China

This is a proceeding of 12th international "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors. This paper studied the radiation hardness of low gain avalanche detector (LGAD) developed by the Novel Device Laboratory (NDL) in Beijing and The Institute of High Energy Physics (IHEP) of the Chinese Academy of Sciences. NDL LGAD sensors with different layouts, epitaxial resistivity, doping profile were irradiated up to 1.02E15 N_eq/cm^2 by 70MeV proton at Cyclotron and Radioisotope Center (CYRIC). The timing resolution of NDL LGAD reached 40-50$ps$ and the collected charge reached 3-4$fC$ after irradiation