Radiation hardness of the Low Gain Avalanche Diodes developed by NDL and IHEP in China

This is a proceeding of 12th international "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors. This paper studied the radiation hardness of low gain avalanche detector (LGAD) developed by the Novel Device Laboratory (NDL) in Beijing and The Institu...

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Autor principal: Fan, Yunyun
Lenguaje:eng
Publicado: 2020
Materias:
Particle Physics - Experiment
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2020.164608
http://cds.cern.ch/record/2713418
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author Fan, Yunyun
author_facet Fan, Yunyun
author_sort Fan, Yunyun
collection CERN
description This is a proceeding of 12th international "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors. This paper studied the radiation hardness of low gain avalanche detector (LGAD) developed by the Novel Device Laboratory (NDL) in Beijing and The Institute of High Energy Physics (IHEP) of the Chinese Academy of Sciences. NDL LGAD sensors with different layouts, epitaxial resistivity, doping profile were irradiated up to 1.02E15 N_eq/cm^2 by 70MeV proton at Cyclotron and Radioisotope Center (CYRIC). The timing resolution of NDL LGAD reached 40-50$ps$ and the collected charge reached 3-4$fC$ after irradiation
id cern-2713418
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2020
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spelling cern-27134182020-11-10T13:33:06Zdoi:10.1016/j.nima.2020.164608http://cds.cern.ch/record/2713418engFan, YunyunRadiation hardness of the Low Gain Avalanche Diodes developed by NDL and IHEP in ChinaParticle Physics - ExperimentThis is a proceeding of 12th international "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors. This paper studied the radiation hardness of low gain avalanche detector (LGAD) developed by the Novel Device Laboratory (NDL) in Beijing and The Institute of High Energy Physics (IHEP) of the Chinese Academy of Sciences. NDL LGAD sensors with different layouts, epitaxial resistivity, doping profile were irradiated up to 1.02E15 N_eq/cm^2 by 70MeV proton at Cyclotron and Radioisotope Center (CYRIC). The timing resolution of NDL LGAD reached 40-50$ps$ and the collected charge reached 3-4$fC$ after irradiationThis is a proceeding of 12th international "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors. This paper studied the radiation hardness of low gain avalanche detector (LGAD) developed by the Novel Device Laboratory (NDL) in Beijing and The Institute of High Energy Physics (IHEP) of the Chinese Academy of Sciences. NDL LGAD sensors with different layouts, epitaxial resistivity, doping profile were irradiated up to 1.02E15 N_eq/cm^2 by 70MeV proton at Cyclotron and Radioisotope Center (CYRIC). The timing resolution of NDL LGAD reached 40-50$ps$ and the collected charge reached 3-4$fC$ after irradiationATL-LARG-PROC-2020-005oai:cds.cern.ch:27134182020-03-20
spellingShingle Particle Physics - Experiment
Fan, Yunyun
Radiation hardness of the Low Gain Avalanche Diodes developed by NDL and IHEP in China
title Radiation hardness of the Low Gain Avalanche Diodes developed by NDL and IHEP in China
title_full Radiation hardness of the Low Gain Avalanche Diodes developed by NDL and IHEP in China
title_fullStr Radiation hardness of the Low Gain Avalanche Diodes developed by NDL and IHEP in China
title_full_unstemmed Radiation hardness of the Low Gain Avalanche Diodes developed by NDL and IHEP in China
title_short Radiation hardness of the Low Gain Avalanche Diodes developed by NDL and IHEP in China
title_sort radiation hardness of the low gain avalanche diodes developed by ndl and ihep in china
topic Particle Physics - Experiment
url https://dx.doi.org/10.1016/j.nima.2020.164608
http://cds.cern.ch/record/2713418
work_keys_str_mv AT fanyunyun radiationhardnessofthelowgainavalanchediodesdevelopedbyndlandihepinchina

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