Cargando…
Radiation hardness of the Low Gain Avalanche Diodes developed by NDL and IHEP in China
This is a proceeding of 12th international "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors. This paper studied the radiation hardness of low gain avalanche detector (LGAD) developed by the Novel Device Laboratory (NDL) in Beijing and The Institu...
| Autor principal: | |
|---|---|
| Lenguaje: | eng |
| Publicado: |
2020
|
| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2020.164608 http://cds.cern.ch/record/2713418 |