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Fabrication of porous gallium nitride by photoelectrochemical etching method
| Autores principales: | , |
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| Lenguaje: | eng |
| Publicado: |
Penerbit USM
2017
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/2713766 |
| _version_ | 1780965340830760960 |
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| author | Cheah, Sook Fong Ng, Sha Shiong |
| author_facet | Cheah, Sook Fong Ng, Sha Shiong |
| author_sort | Cheah, Sook Fong |
| collection | CERN |
| id | cern-2713766 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 2017 |
| publisher | Penerbit USM |
| record_format | invenio |
| spelling | cern-27137662021-04-21T18:09:20Zhttp://cds.cern.ch/record/2713766engCheah, Sook FongNg, Sha ShiongFabrication of porous gallium nitride by photoelectrochemical etching methodEngineeringPenerbit USMoai:cds.cern.ch:27137662017 |
| spellingShingle | Engineering Cheah, Sook Fong Ng, Sha Shiong Fabrication of porous gallium nitride by photoelectrochemical etching method |
| title | Fabrication of porous gallium nitride by photoelectrochemical etching method |
| title_full | Fabrication of porous gallium nitride by photoelectrochemical etching method |
| title_fullStr | Fabrication of porous gallium nitride by photoelectrochemical etching method |
| title_full_unstemmed | Fabrication of porous gallium nitride by photoelectrochemical etching method |
| title_short | Fabrication of porous gallium nitride by photoelectrochemical etching method |
| title_sort | fabrication of porous gallium nitride by photoelectrochemical etching method |
| topic | Engineering |
| url | http://cds.cern.ch/record/2713766 |
| work_keys_str_mv | AT cheahsookfong fabricationofporousgalliumnitridebyphotoelectrochemicaletchingmethod AT ngshashiong fabricationofporousgalliumnitridebyphotoelectrochemicaletchingmethod |