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Fabrication of porous gallium nitride by photoelectrochemical etching method

Detalles Bibliográficos
Autores principales:	Cheah, Sook Fong, Ng, Sha Shiong
Lenguaje:	eng
Publicado:	Penerbit USM 2017
Materias:	Engineering
Acceso en línea:	http://cds.cern.ch/record/2713766

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