Device physics, modeling, technology, and analysis for silicon MESFET

Detalles Bibliográficos
Autores principales: Amiri, Iraj Sadegh, Mohammadi, Hossein, Hosseinghadiry, Mahdiar
Lenguaje:eng
Publicado: Springer 2019
Materias:
XX
Acceso en línea:http://cds.cern.ch/record/2716759
_version_ 1780965529415057408
author Amiri, Iraj Sadegh
Mohammadi, Hossein
Hosseinghadiry, Mahdiar
author_facet Amiri, Iraj Sadegh
Mohammadi, Hossein
Hosseinghadiry, Mahdiar
author_sort Amiri, Iraj Sadegh
collection CERN
id cern-2716759
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2019
publisher Springer
record_format invenio
spelling cern-27167592021-04-21T18:08:35Zhttp://cds.cern.ch/record/2716759engAmiri, Iraj SadeghMohammadi, HosseinHosseinghadiry, MahdiarDevice physics, modeling, technology, and analysis for silicon MESFETXXSpringeroai:cds.cern.ch:27167592019
spellingShingle XX
Amiri, Iraj Sadegh
Mohammadi, Hossein
Hosseinghadiry, Mahdiar
Device physics, modeling, technology, and analysis for silicon MESFET
title Device physics, modeling, technology, and analysis for silicon MESFET
title_full Device physics, modeling, technology, and analysis for silicon MESFET
title_fullStr Device physics, modeling, technology, and analysis for silicon MESFET
title_full_unstemmed Device physics, modeling, technology, and analysis for silicon MESFET
title_short Device physics, modeling, technology, and analysis for silicon MESFET
title_sort device physics, modeling, technology, and analysis for silicon mesfet
topic XX
url http://cds.cern.ch/record/2716759
work_keys_str_mv AT amiriirajsadegh devicephysicsmodelingtechnologyandanalysisforsiliconmesfet
AT mohammadihossein devicephysicsmodelingtechnologyandanalysisforsiliconmesfet
AT hosseinghadirymahdiar devicephysicsmodelingtechnologyandanalysisforsiliconmesfet

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