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Device physics, modeling, technology, and analysis for silicon MESFET

Detalles Bibliográficos
Autores principales:	Amiri, Iraj Sadegh, Mohammadi, Hossein, Hosseinghadiry, Mahdiar
Lenguaje:	eng
Publicado:	Springer 2019
Materias:	XX
Acceso en línea:	http://cds.cern.ch/record/2716759

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