Cargando…
Deep ultraviolet leds: understanding the low external quantum efficiency
Autores principales: | Zhang, Zi-Hui, Chu, Chunshuang, Tian, Kangkai, Zhang, Yonghui |
---|---|
Lenguaje: | eng |
Publicado: |
Springer
2019
|
Materias: | |
Acceso en línea: | http://cds.cern.ch/record/2716790 |
Ejemplares similares
-
Optimization Strategy of 4H-SiC Separated Absorption Charge and Multiplication Avalanche Photodiode Structure for High Ultraviolet Detection Efficiency
por: Kou, Jianquan, et al.
Publicado: (2019) -
Effects of Meshed p-type Contact Structure on the Light Extraction Effect for Deep Ultraviolet Flip-Chip Light-Emitting Diodes
por: Zheng, Yuxin, et al.
Publicado: (2019) -
On the p-AlGaN/n-AlGaN/p-AlGaN Current Spreading Layer for AlGaN-based Deep Ultraviolet Light-Emitting Diodes
por: Che, Jiamang, et al.
Publicado: (2018) -
Improving the Current Spreading by Locally Modulating the Doping Type in the n-AlGaN Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
por: Che, Jiamang, et al.
Publicado: (2019) -
Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency
por: Zhang, Zi-Hui, et al.
Publicado: (2018)