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Ferroelectric-gate field effect transistor memories: device physics and applications
This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics an...
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
Springer
2020
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1007/978-981-15-1212-4 http://cds.cern.ch/record/2717189 |