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Charge transport in low dimensional semiconductor structures: the maximum entropy approach
This book offers, from both a theoretical and a computational perspective, an analysis of macroscopic mathematical models for description of charge transport in electronic devices, in particular in the presence of confining effects, such as in the double gate MOSFET. The models are derived from the...
| Autores principales: | , , |
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| Lenguaje: | eng |
| Publicado: |
Springer
2020
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1007/978-3-030-35993-5 http://cds.cern.ch/record/2717208 |