Radiation hard DMAPS pixel sensors in 150 nm CMOS technology for operation at LHC

Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric field. As a consequence the signal is small and slow, and the rad...

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Detalles Bibliográficos
Autores principales: Barbero, M., Barrillon, Pierre, Bespin, C., Bhat, S., Breugnon, Patrick, Caicedo, Ivan, Chen, Z., Degerli, Y., Dingfelder, J., Godiot, Stephanie, Guilloux, F., Hemperek, Tomasz, Hirono, T., Hügging, Fabian, Krüger, Hans, Moustakas, K., Ouraou, Ahmimed, Pangaud, Patrick, Peric, Ivan, Pohl, David-Leon, Rymaszewski, Piotr, Schwemling, Philippe, Vandenbroucke, M., Wang, T., Wermes, N.
Lenguaje:eng
Publicado: 2019
Materias:
physics.ins-det
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1088/1748-0221/15/05/P05013
http://cds.cern.ch/record/2729156

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