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The CLICTD Monolithic CMOS Sensor
CLICTD is a monolithic silicon pixel sensor fabricated in a modified 180 nm CMOS imaging process with a small collection electrode design and a high-resistivity epitaxial layer. It features an innovative sub-pixel segmentation scheme and is optimised for fast charge collection and high spatial resol...
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Lenguaje: | eng |
Publicado: |
2021
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.7566/JPSCP.34.010019 http://cds.cern.ch/record/2744605 |
Sumario: | CLICTD is a monolithic silicon pixel sensor fabricated in a modified 180 nm CMOS imaging process with a small collection electrode design and a high-resistivity epitaxial layer. It features an innovative sub-pixel segmentation scheme and is optimised for fast charge collection and high spatial resolution. The sensor was developed to target the requirements for the tracking detector of the proposed future Compact Linear Collider (CLIC). Most notably, a temporal resolution of a few nanoseconds and a spatial resolution below 7 μm are demanded. In this contribution, the sensor performance measured in beam tests is presented with emphasis on recent studies using assemblies with different thicknesses (down to 50 μm to minimize the material budget) and inclined particle tracks. |
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