Cargando…

The CLICTD Monolithic CMOS Sensor

CLICTD is a monolithic silicon pixel sensor fabricated in a modified 180 nm CMOS imaging process with a small collection electrode design and a high-resistivity epitaxial layer. It features an innovative sub-pixel segmentation scheme and is optimised for fast charge collection and high spatial resol...

Descripción completa

Detalles Bibliográficos
Autor principal: Dort, Katharina
Lenguaje:eng
Publicado: 2021
Materias:
Acceso en línea:https://dx.doi.org/10.7566/JPSCP.34.010019
http://cds.cern.ch/record/2744605
_version_ 1780968640142639104
author Dort, Katharina
author_facet Dort, Katharina
author_sort Dort, Katharina
collection CERN
description CLICTD is a monolithic silicon pixel sensor fabricated in a modified 180 nm CMOS imaging process with a small collection electrode design and a high-resistivity epitaxial layer. It features an innovative sub-pixel segmentation scheme and is optimised for fast charge collection and high spatial resolution. The sensor was developed to target the requirements for the tracking detector of the proposed future Compact Linear Collider (CLIC). Most notably, a temporal resolution of a few nanoseconds and a spatial resolution below 7 μm are demanded. In this contribution, the sensor performance measured in beam tests is presented with emphasis on recent studies using assemblies with different thicknesses (down to 50 μm to minimize the material budget) and inclined particle tracks.
id cern-2744605
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2021
record_format invenio
spelling cern-27446052022-02-05T03:29:57Zdoi:10.7566/JPSCP.34.010019http://cds.cern.ch/record/2744605engDort, KatharinaThe CLICTD Monolithic CMOS SensorParticle Physics - ExperimentDetectors and Experimental TechniquesCLICTD is a monolithic silicon pixel sensor fabricated in a modified 180 nm CMOS imaging process with a small collection electrode design and a high-resistivity epitaxial layer. It features an innovative sub-pixel segmentation scheme and is optimised for fast charge collection and high spatial resolution. The sensor was developed to target the requirements for the tracking detector of the proposed future Compact Linear Collider (CLIC). Most notably, a temporal resolution of a few nanoseconds and a spatial resolution below 7 μm are demanded. In this contribution, the sensor performance measured in beam tests is presented with emphasis on recent studies using assemblies with different thicknesses (down to 50 μm to minimize the material budget) and inclined particle tracks.CLICTD is a monolithic silicon pixel sensor fabricated in a modified 180 nm CMOS imaging process with a small collection electrode design and a high-resistivity epitaxial layer. It features an innovative sub-pixel segmentation scheme and is optimised for fast charge collection and high spatial resolution. The sensor was developed to target the requirements for the tracking detector of the proposed future Compact Linear Collider (CLIC). Most notably, a temporal resolution of a few nanoseconds and a spatial resolution below 7 µm are demanded. In this contribution, the sensor performance measured in beam tests is presented with emphasis on recent studies using assemblies with different thicknesses (down to 50 µm to minimize the material budget) and inclined particle tracks.CLICTD is a monolithic silicon pixel sensor fabricated in a modified 180 nm CMOS imaging process with a small collection electrode design and a high-resistivity epitaxial layer. It features an innovative sub-pixel segmentation scheme and is optimised for fast charge collection and high spatial resolution. The sensor was developed to target the requirements for the tracking detector of the proposed future Compact Linear Collider (CLIC). Most notably, a temporal resolution of a few nanoseconds and a spatial resolution below 7 microns are demanded. In this contribution, the sensor performance measured in beam tests is presented with emphasis on recent studies using assemblies with different thicknesses (down to 50 microns to minimize the material budget) and inclined particle tracks.arXiv:2011.09389CLICdp-Conf-2020-007oai:cds.cern.ch:27446052021
spellingShingle Particle Physics - Experiment
Detectors and Experimental Techniques
Dort, Katharina
The CLICTD Monolithic CMOS Sensor
title The CLICTD Monolithic CMOS Sensor
title_full The CLICTD Monolithic CMOS Sensor
title_fullStr The CLICTD Monolithic CMOS Sensor
title_full_unstemmed The CLICTD Monolithic CMOS Sensor
title_short The CLICTD Monolithic CMOS Sensor
title_sort clictd monolithic cmos sensor
topic Particle Physics - Experiment
Detectors and Experimental Techniques
url https://dx.doi.org/10.7566/JPSCP.34.010019
http://cds.cern.ch/record/2744605
work_keys_str_mv AT dortkatharina theclictdmonolithiccmossensor
AT dortkatharina clictdmonolithiccmossensor