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Emission Channeling Lattice Location Studies in Semiconductors using Highly Pixellated Timepix Detectors
The implantation of dopant impurities in semiconductor crystals and the understanding of their lattice site location behaviour in the manufacturing process is essential for the control of their electrical, magnetic and optical properties. The development and improvement of the detection systems used...
Autor principal: | Bosne, Eric David |
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Lenguaje: | eng |
Publicado: |
2020
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Materias: | |
Acceso en línea: | http://cds.cern.ch/record/2748141 |
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