Test-beam characterisation of the CLICTD technology demonstrator - a small collection electrode High-Resistivity CMOS pixel sensor with simultaneous time and energy measurement

The CLIC Tracker Detector (CLICTD) is a monolithic pixel sensor. It is fabricated in a 180 nm CMOS imaging process, modified with an additional deep low-dose n-type implant to obtain full lateral depletion. The sensor features a small collection diode, which is essen- tial for achieving a low input...

Descripción completa

Detalles Bibliográficos
Autores principales: Ballabriga Sune, Rafael, Buschmann, Eric, Campbell, Michael, Dannheim, D, Dort, K, Egidos, N, Huth, L, Kremastiotis, I, Kroger, J, Linssen, L, Llopart, X, Munker, M, Nurnberg, A, Snoeys, W, Spannagel, S, Vanat, T, Vincente, M, Williams, M
Lenguaje:eng
Publicado: 2021
Materias:
Acceso en línea:http://cds.cern.ch/record/2751113
_version_ 1780969171898597376
author Ballabriga Sune, Rafael
Buschmann, Eric
Campbell, Michael
Dannheim, D
Dort, K
Egidos, N
Huth, L
Kremastiotis, I
Kroger, J
Linssen, L
Llopart, X
Munker, M
Nurnberg, A
Snoeys, W
Spannagel, S
Vanat, T
Vincente, M
Williams, M
author_facet Ballabriga Sune, Rafael
Buschmann, Eric
Campbell, Michael
Dannheim, D
Dort, K
Egidos, N
Huth, L
Kremastiotis, I
Kroger, J
Linssen, L
Llopart, X
Munker, M
Nurnberg, A
Snoeys, W
Spannagel, S
Vanat, T
Vincente, M
Williams, M
author_sort Ballabriga Sune, Rafael
collection CERN
description The CLIC Tracker Detector (CLICTD) is a monolithic pixel sensor. It is fabricated in a 180 nm CMOS imaging process, modified with an additional deep low-dose n-type implant to obtain full lateral depletion. The sensor features a small collection diode, which is essen- tial for achieving a low input capacitance. The CLICTD sensor was designed as a technology demonstrator in the context of the tracking detector studies for the Compact Linear Collider (CLIC). Its design characteristics are of broad interest beyond CLIC, for HL-LHC track- ing detector upgrades. It is produced in two different pixel flavours: one with a continuous deep n-type implant, and one with a segmented n-type implant to ensure fast charge collec- tion. The pixel matrix consists of 16 × 128 detection channels measuring 300 μm × 30 μm. Each detection channel is segmented into eight sub-pixels to reduce the amount of digital circuity while maintaining a small collection electrode pitch. This paper presents the char- acterisation results of the CLICTD sensor in a particle beam. The different pixel flavours are compared in detail by using the simultaneous time-over-threshold and time-of-arrival measurement functionalities. Most notably, a time resolution down to (5.8 ± 0.1) ns and a spatial resolution down to (4.6 ± 0.2) μm are measured. The hit detection efficiency is found to be well above 99.7% for thresholds of the order of several hundred electrons.
id cern-2751113
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2021
record_format invenio
spelling cern-27511132021-02-04T22:56:50Zhttp://cds.cern.ch/record/2751113engBallabriga Sune, RafaelBuschmann, EricCampbell, MichaelDannheim, DDort, KEgidos, NHuth, LKremastiotis, IKroger, JLinssen, LLlopart, XMunker, MNurnberg, ASnoeys, WSpannagel, SVanat, TVincente, MWilliams, MTest-beam characterisation of the CLICTD technology demonstrator - a small collection electrode High-Resistivity CMOS pixel sensor with simultaneous time and energy measurementParticle Physics - ExperimentThe CLIC Tracker Detector (CLICTD) is a monolithic pixel sensor. It is fabricated in a 180 nm CMOS imaging process, modified with an additional deep low-dose n-type implant to obtain full lateral depletion. The sensor features a small collection diode, which is essen- tial for achieving a low input capacitance. The CLICTD sensor was designed as a technology demonstrator in the context of the tracking detector studies for the Compact Linear Collider (CLIC). Its design characteristics are of broad interest beyond CLIC, for HL-LHC track- ing detector upgrades. It is produced in two different pixel flavours: one with a continuous deep n-type implant, and one with a segmented n-type implant to ensure fast charge collec- tion. The pixel matrix consists of 16 × 128 detection channels measuring 300 μm × 30 μm. Each detection channel is segmented into eight sub-pixels to reduce the amount of digital circuity while maintaining a small collection electrode pitch. This paper presents the char- acterisation results of the CLICTD sensor in a particle beam. The different pixel flavours are compared in detail by using the simultaneous time-over-threshold and time-of-arrival measurement functionalities. Most notably, a time resolution down to (5.8 ± 0.1) ns and a spatial resolution down to (4.6 ± 0.2) μm are measured. The hit detection efficiency is found to be well above 99.7% for thresholds of the order of several hundred electrons.CLICdp-Pub-2021-001oai:cds.cern.ch:27511132021
spellingShingle Particle Physics - Experiment
Ballabriga Sune, Rafael
Buschmann, Eric
Campbell, Michael
Dannheim, D
Dort, K
Egidos, N
Huth, L
Kremastiotis, I
Kroger, J
Linssen, L
Llopart, X
Munker, M
Nurnberg, A
Snoeys, W
Spannagel, S
Vanat, T
Vincente, M
Williams, M
Test-beam characterisation of the CLICTD technology demonstrator - a small collection electrode High-Resistivity CMOS pixel sensor with simultaneous time and energy measurement
title Test-beam characterisation of the CLICTD technology demonstrator - a small collection electrode High-Resistivity CMOS pixel sensor with simultaneous time and energy measurement
title_full Test-beam characterisation of the CLICTD technology demonstrator - a small collection electrode High-Resistivity CMOS pixel sensor with simultaneous time and energy measurement
title_fullStr Test-beam characterisation of the CLICTD technology demonstrator - a small collection electrode High-Resistivity CMOS pixel sensor with simultaneous time and energy measurement
title_full_unstemmed Test-beam characterisation of the CLICTD technology demonstrator - a small collection electrode High-Resistivity CMOS pixel sensor with simultaneous time and energy measurement
title_short Test-beam characterisation of the CLICTD technology demonstrator - a small collection electrode High-Resistivity CMOS pixel sensor with simultaneous time and energy measurement
title_sort test-beam characterisation of the clictd technology demonstrator - a small collection electrode high-resistivity cmos pixel sensor with simultaneous time and energy measurement
topic Particle Physics - Experiment
url http://cds.cern.ch/record/2751113
work_keys_str_mv AT ballabrigasunerafael testbeamcharacterisationoftheclictdtechnologydemonstratorasmallcollectionelectrodehighresistivitycmospixelsensorwithsimultaneoustimeandenergymeasurement
AT buschmanneric testbeamcharacterisationoftheclictdtechnologydemonstratorasmallcollectionelectrodehighresistivitycmospixelsensorwithsimultaneoustimeandenergymeasurement
AT campbellmichael testbeamcharacterisationoftheclictdtechnologydemonstratorasmallcollectionelectrodehighresistivitycmospixelsensorwithsimultaneoustimeandenergymeasurement
AT dannheimd testbeamcharacterisationoftheclictdtechnologydemonstratorasmallcollectionelectrodehighresistivitycmospixelsensorwithsimultaneoustimeandenergymeasurement
AT dortk testbeamcharacterisationoftheclictdtechnologydemonstratorasmallcollectionelectrodehighresistivitycmospixelsensorwithsimultaneoustimeandenergymeasurement
AT egidosn testbeamcharacterisationoftheclictdtechnologydemonstratorasmallcollectionelectrodehighresistivitycmospixelsensorwithsimultaneoustimeandenergymeasurement
AT huthl testbeamcharacterisationoftheclictdtechnologydemonstratorasmallcollectionelectrodehighresistivitycmospixelsensorwithsimultaneoustimeandenergymeasurement
AT kremastiotisi testbeamcharacterisationoftheclictdtechnologydemonstratorasmallcollectionelectrodehighresistivitycmospixelsensorwithsimultaneoustimeandenergymeasurement
AT krogerj testbeamcharacterisationoftheclictdtechnologydemonstratorasmallcollectionelectrodehighresistivitycmospixelsensorwithsimultaneoustimeandenergymeasurement
AT linssenl testbeamcharacterisationoftheclictdtechnologydemonstratorasmallcollectionelectrodehighresistivitycmospixelsensorwithsimultaneoustimeandenergymeasurement
AT llopartx testbeamcharacterisationoftheclictdtechnologydemonstratorasmallcollectionelectrodehighresistivitycmospixelsensorwithsimultaneoustimeandenergymeasurement
AT munkerm testbeamcharacterisationoftheclictdtechnologydemonstratorasmallcollectionelectrodehighresistivitycmospixelsensorwithsimultaneoustimeandenergymeasurement
AT nurnberga testbeamcharacterisationoftheclictdtechnologydemonstratorasmallcollectionelectrodehighresistivitycmospixelsensorwithsimultaneoustimeandenergymeasurement
AT snoeysw testbeamcharacterisationoftheclictdtechnologydemonstratorasmallcollectionelectrodehighresistivitycmospixelsensorwithsimultaneoustimeandenergymeasurement
AT spannagels testbeamcharacterisationoftheclictdtechnologydemonstratorasmallcollectionelectrodehighresistivitycmospixelsensorwithsimultaneoustimeandenergymeasurement
AT vanatt testbeamcharacterisationoftheclictdtechnologydemonstratorasmallcollectionelectrodehighresistivitycmospixelsensorwithsimultaneoustimeandenergymeasurement
AT vincentem testbeamcharacterisationoftheclictdtechnologydemonstratorasmallcollectionelectrodehighresistivitycmospixelsensorwithsimultaneoustimeandenergymeasurement
AT williamsm testbeamcharacterisationoftheclictdtechnologydemonstratorasmallcollectionelectrodehighresistivitycmospixelsensorwithsimultaneoustimeandenergymeasurement