Measurement of the effective silicon band gap energy with the ATLAS Pixel detector

Silicon sensor leakage currents are often used as a diagnostic tool for monitoring the bulk damage caused by non-ionizing energy loss. One of the key inputs to interpreting leakage current data is the effective band gap energy, which is used to correct for temperature variations in the current. Using dedicated temperature scans in 2018 and 2019, the effective band gap energy is measured for the silicon sensors in the ATLAS pixel detector. This talk will report the results of the measurement and discuss implications for fluence monitoring and predictions.