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Bands and photons in III-V semiconductor quantum structures
Semiconductor quantum structures are at the core of many photonic devices such as lasers, photodetectors, solar cells etc. To appreciate why they are such a good fit to these devices, we must understand the basic features of their band structure and how they interact with incident light. This book t...
Autores principales: | , , |
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Lenguaje: | eng |
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Oxford University Press
2021
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1093/oso/9780198767275.001.0001 http://cds.cern.ch/record/2752697 |
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author | Vurgaftman, Igor Lumb, Matthew P Meyer, Jerry R |
author_facet | Vurgaftman, Igor Lumb, Matthew P Meyer, Jerry R |
author_sort | Vurgaftman, Igor |
collection | CERN |
description | Semiconductor quantum structures are at the core of many photonic devices such as lasers, photodetectors, solar cells etc. To appreciate why they are such a good fit to these devices, we must understand the basic features of their band structure and how they interact with incident light. This book takes the reader from the very basics of III-V semiconductors (some preparation in quantum mechanics and electromagnetism is helpful) and shows how seemingly obscure results such as detailed forms of the Hamiltonian, optical transition strengths, and recombination mechanisms follow. The reader does not need to consult other references to fully understand the material, although a few handpicked sources are listed for those who would like to deepen their knowledge further. Connections to the properties of novel materials such as graphene and transition metal dichalcogenides are pointed out, to help prepare the reader for contributing at the forefront of research. The book also supplies a complete, up-to-date database of the band parameters that enter into the calculations, along with tables of optical constants and interpolation schemes for alloys. From these foundations, the book goes on to derive the characteristics of photonic semiconductor devices (with a focus on the mid-infrared) using the same principles of building all concepts from the ground up, explaining all derivations in detail, giving quantitative examples, and laying out dimensional arguments whenever they can help the reader’s understanding. A substantial fraction of the material in this book has not appeared in print anywhere else, including journal publications. |
id | cern-2752697 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2021 |
publisher | Oxford University Press |
record_format | invenio |
spelling | cern-27526972021-04-21T16:43:36Zdoi:10.1093/oso/9780198767275.001.0001http://cds.cern.ch/record/2752697engVurgaftman, IgorLumb, Matthew PMeyer, Jerry RBands and photons in III-V semiconductor quantum structuresEngineeringSemiconductor quantum structures are at the core of many photonic devices such as lasers, photodetectors, solar cells etc. To appreciate why they are such a good fit to these devices, we must understand the basic features of their band structure and how they interact with incident light. This book takes the reader from the very basics of III-V semiconductors (some preparation in quantum mechanics and electromagnetism is helpful) and shows how seemingly obscure results such as detailed forms of the Hamiltonian, optical transition strengths, and recombination mechanisms follow. The reader does not need to consult other references to fully understand the material, although a few handpicked sources are listed for those who would like to deepen their knowledge further. Connections to the properties of novel materials such as graphene and transition metal dichalcogenides are pointed out, to help prepare the reader for contributing at the forefront of research. The book also supplies a complete, up-to-date database of the band parameters that enter into the calculations, along with tables of optical constants and interpolation schemes for alloys. From these foundations, the book goes on to derive the characteristics of photonic semiconductor devices (with a focus on the mid-infrared) using the same principles of building all concepts from the ground up, explaining all derivations in detail, giving quantitative examples, and laying out dimensional arguments whenever they can help the reader’s understanding. A substantial fraction of the material in this book has not appeared in print anywhere else, including journal publications.Oxford University Pressoai:cds.cern.ch:27526972021 |
spellingShingle | Engineering Vurgaftman, Igor Lumb, Matthew P Meyer, Jerry R Bands and photons in III-V semiconductor quantum structures |
title | Bands and photons in III-V semiconductor quantum structures |
title_full | Bands and photons in III-V semiconductor quantum structures |
title_fullStr | Bands and photons in III-V semiconductor quantum structures |
title_full_unstemmed | Bands and photons in III-V semiconductor quantum structures |
title_short | Bands and photons in III-V semiconductor quantum structures |
title_sort | bands and photons in iii-v semiconductor quantum structures |
topic | Engineering |
url | https://dx.doi.org/10.1093/oso/9780198767275.001.0001 http://cds.cern.ch/record/2752697 |
work_keys_str_mv | AT vurgaftmanigor bandsandphotonsiniiivsemiconductorquantumstructures AT lumbmatthewp bandsandphotonsiniiivsemiconductorquantumstructures AT meyerjerryr bandsandphotonsiniiivsemiconductorquantumstructures |