Cargando…

Bands and photons in III-V semiconductor quantum structures

Semiconductor quantum structures are at the core of many photonic devices such as lasers, photodetectors, solar cells etc. To appreciate why they are such a good fit to these devices, we must understand the basic features of their band structure and how they interact with incident light. This book t...

Descripción completa

Detalles Bibliográficos
Autores principales: Vurgaftman, Igor, Lumb, Matthew P, Meyer, Jerry R
Lenguaje:eng
Publicado: Oxford University Press 2021
Materias:
Acceso en línea:https://dx.doi.org/10.1093/oso/9780198767275.001.0001
http://cds.cern.ch/record/2752697
_version_ 1780969297838866432
author Vurgaftman, Igor
Lumb, Matthew P
Meyer, Jerry R
author_facet Vurgaftman, Igor
Lumb, Matthew P
Meyer, Jerry R
author_sort Vurgaftman, Igor
collection CERN
description Semiconductor quantum structures are at the core of many photonic devices such as lasers, photodetectors, solar cells etc. To appreciate why they are such a good fit to these devices, we must understand the basic features of their band structure and how they interact with incident light. This book takes the reader from the very basics of III-V semiconductors (some preparation in quantum mechanics and electromagnetism is helpful) and shows how seemingly obscure results such as detailed forms of the Hamiltonian, optical transition strengths, and recombination mechanisms follow. The reader does not need to consult other references to fully understand the material, although a few handpicked sources are listed for those who would like to deepen their knowledge further. Connections to the properties of novel materials such as graphene and transition metal dichalcogenides are pointed out, to help prepare the reader for contributing at the forefront of research. The book also supplies a complete, up-to-date database of the band parameters that enter into the calculations, along with tables of optical constants and interpolation schemes for alloys. From these foundations, the book goes on to derive the characteristics of photonic semiconductor devices (with a focus on the mid-infrared) using the same principles of building all concepts from the ground up, explaining all derivations in detail, giving quantitative examples, and laying out dimensional arguments whenever they can help the reader’s understanding. A substantial fraction of the material in this book has not appeared in print anywhere else, including journal publications.
id cern-2752697
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2021
publisher Oxford University Press
record_format invenio
spelling cern-27526972021-04-21T16:43:36Zdoi:10.1093/oso/9780198767275.001.0001http://cds.cern.ch/record/2752697engVurgaftman, IgorLumb, Matthew PMeyer, Jerry RBands and photons in III-V semiconductor quantum structuresEngineeringSemiconductor quantum structures are at the core of many photonic devices such as lasers, photodetectors, solar cells etc. To appreciate why they are such a good fit to these devices, we must understand the basic features of their band structure and how they interact with incident light. This book takes the reader from the very basics of III-V semiconductors (some preparation in quantum mechanics and electromagnetism is helpful) and shows how seemingly obscure results such as detailed forms of the Hamiltonian, optical transition strengths, and recombination mechanisms follow. The reader does not need to consult other references to fully understand the material, although a few handpicked sources are listed for those who would like to deepen their knowledge further. Connections to the properties of novel materials such as graphene and transition metal dichalcogenides are pointed out, to help prepare the reader for contributing at the forefront of research. The book also supplies a complete, up-to-date database of the band parameters that enter into the calculations, along with tables of optical constants and interpolation schemes for alloys. From these foundations, the book goes on to derive the characteristics of photonic semiconductor devices (with a focus on the mid-infrared) using the same principles of building all concepts from the ground up, explaining all derivations in detail, giving quantitative examples, and laying out dimensional arguments whenever they can help the reader’s understanding. A substantial fraction of the material in this book has not appeared in print anywhere else, including journal publications.Oxford University Pressoai:cds.cern.ch:27526972021
spellingShingle Engineering
Vurgaftman, Igor
Lumb, Matthew P
Meyer, Jerry R
Bands and photons in III-V semiconductor quantum structures
title Bands and photons in III-V semiconductor quantum structures
title_full Bands and photons in III-V semiconductor quantum structures
title_fullStr Bands and photons in III-V semiconductor quantum structures
title_full_unstemmed Bands and photons in III-V semiconductor quantum structures
title_short Bands and photons in III-V semiconductor quantum structures
title_sort bands and photons in iii-v semiconductor quantum structures
topic Engineering
url https://dx.doi.org/10.1093/oso/9780198767275.001.0001
http://cds.cern.ch/record/2752697
work_keys_str_mv AT vurgaftmanigor bandsandphotonsiniiivsemiconductorquantumstructures
AT lumbmatthewp bandsandphotonsiniiivsemiconductorquantumstructures
AT meyerjerryr bandsandphotonsiniiivsemiconductorquantumstructures