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Temporal characterisation of silicon sensors on Timepix3 ASICs
The timing performance of silicon sensors bump-bonded to Timepix3 ASICs is investigated, prior to and after different types of irradiation up to 8 × 1015 1 MeV neq cm−2. The sensors have been tested with a beam of charged particles in two different configurations, perpendicular to and almost parall...
Autores principales: | , , , , , , , , , , |
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Lenguaje: | eng |
Publicado: |
2021
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1088/1748-0221/16/07/P07035 http://cds.cern.ch/record/2753970 |