Direct Structural Identification and Quantification of the Split-Vacancy Configuration for Implanted Sn in Diamond

We demonstrate formation of the ideal split-vacancy configuration of the Sn-vacancy center upon implantation into natural diamond. Using beta-emission channeling following low fluence 121Sn implantation (2E12 atoms/cm2, 60 keV) at the ISOLDE facility at CERN, we directly identified and quantified th...

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Detalles Bibliográficos
Autores principales: Wahl, Ulrich, Martins Correia, Joao, Villarreal, Renan, Bourgeois, Emilie, Gulka, Michal, Nesladek, Milos, Vantomme, André, Da Costa Pereira, Lino Miguel
Lenguaje:eng
Publicado: 2021
Acceso en línea:https://dx.doi.org/10.1103/PhysRevLett.125.045301
http://cds.cern.ch/record/2766020

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