Cargando…

Lattice sites of implanted Na in GaN and AlN in comparison to other light alkalis and alkaline earths

The lattice location of ion implanted radioactive 24Na (t1/2=14.96 h) in GaN and AlN was determined using the emission channeling technique at the ISOLDE/CERN facility. In the room temperature as-implanted state in both GaN and AlN, the majority of the sodium atoms are found on interstitial sites ne...

Descripción completa

Detalles Bibliográficos
Autores principales:	Wahl, Ulrich, David Bosne, Eric, Amorim, Lígia, Granadeiro Costa, Angelo Rafael, De Vries, Bart, Martins Correia, Joao, da Silva, Manuel Ribeiro, Da Costa Pereira, Lino Miguel, Vantomme, André
Lenguaje:	eng
Publicado:	2021
Acceso en línea:	https://dx.doi.org/10.1063/5.0009653 http://cds.cern.ch/record/2766021

Ejemplares similares

Lattice location of Mg in GaN: a fresh look at doping limitations
por: Wahl, Ulrich, et al.
Publicado: (2017)

Lattice Location Studies of the Amphoteric Nature of Implanted Mg in GaN
por: Wahl, Ulrich, et al.
Publicado: (2021)

Precise lattice location of substitutional and interstitial Mg in AlN
por: Amorim, Lígia Marina, et al.
Publicado: (2013)

Lattice location and optical activation of rare earth implanted GaN
por: Wahl, U, et al.
Publicado: (2003)

Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD
por: Xu, Peiqiang, et al.
Publicado: (2012)

Emission channeling studies on transition-metal doped GaN and ZnO: Cation versus anion substitution
por: Da Costa Pereira, Lino Miguel, et al.
Publicado: (2014)

Evidence of N substitution by Mn in GaN
por: Pereira, LMC, et al.
Publicado: (2013)

Scattering Analysis of AlGaN/AlN/GaN Heterostructures with Fe-Doped GaN Buffer
por: Arteev, Dmitri S., et al.
Publicado: (2022)

Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
por: Ronning, C R, et al.
Publicado: (2000)

Ion implantation of Cd and Ag into AlN and GaN
por: Miranda, Sérgio M C, et al.
Publicado: (2012)

AlN formation by an Al/GaN substitution reaction
por: Noorprajuda, Marsetio, et al.
Publicado: (2020)

Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy
por: Sang, Ling, et al.
Publicado: (2014)

Effect of fluence on the lattice site of implanted Er and implantation induced strain in GaN
por: Wahl, U, et al.
Publicado: (2009)

Lattice sites, charge states and spin–lattice relaxation of Fe ions in 57Mn+ implanted GaN and AlN
por: Masenda, H, et al.
Publicado: (2016)

Lattice site location and annealing behaviour of Ca and Sr implanted GaN
por: De Vries, Bart, et al.
Publicado: (2006)

Lattice location of implanted $^{147}$Nd and $^{147*}$Pm in GaN using emission channeling
por: De Vries, B, et al.
Publicado: (2003)

Direct evidence of Be as an amphoteric dopant in GaN
por: Wahl, U., et al.
Publicado: (2022)

Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD
por: Zhang, Jin, et al.
Publicado: (2014)

The Features of Phase Stability of GaN and AlN Films at Nanolevel
por: Chepkasov, Ilya V., et al.
Publicado: (2020)

Influence of O and C co-implantation on the lattice site of Er in GaN
por: De Vries, Bart, et al.
Publicado: (2004)

Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN
por: Kamarundzaman, Anas, et al.
Publicado: (2021)

Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes
por: Hu, Hongpo, et al.
Publicado: (2017)

Lattice location and luminescence behavior of rare earth elements implanted in GaN
por: Dalmer, M, et al.
Publicado: (1998)

Lattice location of Mn in GaAs and GaN
por: De Coster, Arnaud
Publicado: (2015)

Lattice location of Mn in GaAs and GaN
por: De Coster, Arnaud
Publicado: (2017)

Lattice location of implanted transition metals in 3C–SiC
por: Granadeiro Costa, Angelo Rafael, et al.
Publicado: (2017)

AlN/GaN Digital Alloy for Mid- and Deep-Ultraviolet Optoelectronics
por: Sun, Wei, et al.
Publicado: (2017)

Direct evidence for implanted Fe on substitutional Ga sites in GaN
por: Wahl, U, et al.
Publicado: (2003)

Emission channeling studies of Pr in GaN
por: Wahl, U, et al.
Publicado: (2003)

AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique
por: Liu, Xiao-Yong, et al.
Publicado: (2015)

The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study
por: Kuchuk, Andrian V., et al.
Publicado: (2016)

Defect Structure Determination of GaN Films in GaN/AlN/Si Heterostructures by HR-TEM, XRD, and Slow Positrons Experiments
por: Ene, Vladimir Lucian, et al.
Publicado: (2020)

Author Correction: Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN
por: Kamarundzaman, Anas, et al.
Publicado: (2021)

Substrate effects on the strain relaxation in GaN/AlN short-period superlattices
por: Kladko, Vasyl, et al.
Publicado: (2012)

Acoustic phonon modes and phononic bandgaps in GaN/AlN nanowire superlattices
por: Mizuno, Seiji
Publicado: (2012)

Single-Exciton Photoluminescence in a GaN Monolayer inside an AlN Nanocolumn
por: Evropeitsev, Eugenii, et al.
Publicado: (2023)

Investigation of AlGaN/GaN Heterostructures Grown on Sputtered AlN Templates with Different Nucleation Layers
por: Liu, Chuan-Yang, et al.
Publicado: (2019)

Improving the emission efficiency of MBE-grown GaN/AlN QDs by strain control
por: Niu, Lang, et al.
Publicado: (2011)

Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures
por: Growden, Tyler A, et al.
Publicado: (2018)

Epitaxial Growth of GaN on Magnetron Sputtered AlN/Hexagonal BN/Sapphire Substrates
por: Wu, Jinxing, et al.
Publicado: (2020)

Cannot write session to /tmp/vufind_sessions/sess_uuu004bbu5uqtn955ebojh7uhp