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Test-beam and simulation studies for the CLICTD technology demonstrator - a monolithic CMOS pixel sensor with a small collection diode

The CLIC Tracker Detector (CLICTD) is a monolithic pixel sensor featuring pixels of 30 μm × 37.5 μm and a small collection diode. The sensor is fabricated in a 180 nm CMOS imaging process, using two different pixel flavours: the first with a continuous n-type implant for full lateral depletion, and...

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Detalles Bibliográficos
Autor principal: Dort, Katharina
Lenguaje:eng
Publicado: 2022
Materias:
Acceso en línea:https://dx.doi.org/10.1088/1742-6596/2374/1/012170
http://cds.cern.ch/record/2773808
Descripción
Sumario:The CLIC Tracker Detector (CLICTD) is a monolithic pixel sensor featuring pixels of 30 μm × 37.5 μm and a small collection diode. The sensor is fabricated in a 180 nm CMOS imaging process, using two different pixel flavours: the first with a continuous n-type implant for full lateral depletion, and the second with a segmentation in the n-type implant for accelerated charge collection. Moreover, CLICTD features an innovative sub-pixel segmentation scheme that allows the digital footprint to be reduced while maintaining a small sub-pixel pitch. In this contribution, test-beam measurements for the pixel flavour with the segmented n-implant are presented. The performance is evaluated in terms of time and spatial resolution as well as efficiency. Furthermore, the test-beam data is compared to simulation studies using a combination of 3D TCAD and Monte Carlo simulation tools.